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04N65

N-Channel 650 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

AM04N65

MOSFET650V,4AN-CHANNEL

FEATURE ?RDS(ON),typ.=2.1Ω@VGS=10V ?HighCurrentRating ?LowerCapacitance ?LowerTotalGateChargeMinimizeSwitchingLoss ?FastRecoveryBodyDiode DESCRIPTION TheAM04N65isavailableinTO220FPackage. APPLICATION ?Adaptor ?Charger ?SMPSStandbyPower

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

CEB04N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB04N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED04N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED04N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 700V@TJmax,3.1A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF04N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF04N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP04N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP04N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應商型號品牌批號封裝庫存備注價格
AOS
2020+
TO-252
430
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
AP
24+
TO251
6000
原裝房間現(xiàn)貨可出樣品
 詢價
MOSPEC
1816+
TO-220
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
AP
21+
TO251
19000
只做正品原裝現(xiàn)貨
 詢價
AP
23+
TO251
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
AO/萬代
23+
TO-252
69820
終端可以免費供樣,支持BOM配單!
 詢價
APEC/富鼎
2022+
49
全新原裝 貨期兩周
 詢價
A
23+
TO-220
10000
公司只做原裝正品
 詢價
A
TO-220
22+
6000
十年配單,只做原裝
 詢價
APEC/富鼎
23+
TO-220
200530
原廠授權代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
更多04N65供應商 更新時間2025-1-26 8:21:00

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