13R

型號(hào)：INA215BIRSWR；Package：UQFN；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1Features ?UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V ?OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) ?Accuracy: –

13R

型號(hào)：FTC9013RLT1G；Package：SOT-23；General Purpose Transistors

13R

型號(hào)：FTC9013SR；Package：SOT-23；General Purpose Transistors

13R

型號(hào)：S-L9013PLT1G；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

13R

型號(hào)：S-L9013PLT3G；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

13R

型號(hào)：S-L9013QLT1G；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

13R

型號(hào)：S-L9013QLT3G；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

13RL60H

型號(hào)：PSMN013-60HL；Package：LFPAK56D；N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

Generaldescription DuallogiclevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits ?DualMOSFET ?Repetitiveavalancherated ?HighreliabilityLFPAK56Dpackage ?Copper-clip,solderdieattach ?Qualifiedto175°C Applica

13RS60H

型號(hào)：PSMN013-60HS；Package：LFPAK56D；N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Generaldescription DualstandardlevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits ?DualMOSFET ?Repetitiveavalancherated ?HighreliabilityLFPAK56Dpackage ?Copper-clip,solderdieattach ?Qualifiedto175°C Appl