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1N5819-T

GuardRingDieConstructionforTransientProtection

DIODES

Diodes Incorporated

1N5819-T

1.0ASCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

1N5819-TB

1.0ASCHOTTKYBARRIERDIODE

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

1N5819-TB

1.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity ProtectionApplications

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

1N5819T-G

SchottkyBarrierRectifiers

Features -Epitaxialconstruction. -Lowforwardvoltagedrop. -Metal-Semiconductorjunctionwithguardring. -Highcurrentcapability. -Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

1N5819TR

SchottkyRectifier,1.0A

DESCRIPTION The1N5819axialleadedSchottkyrectifierhasbeenoptimizedforverylowforwardvoltagedrop,withmoderateleakage.Typicalapplicationsareinswitchingpowersupplies,converters,freewheelingdiodes,andreversebatteryprotection. FEATURES ?Lowprofile,axialleadedoutline

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

1N5819TR

SCHOTTKYRECTIFIER1.0Amp

Description/Features The1N5818/1N5819axialleadedSchottkyrectifierhasbeenoptimizedforverylowforwardvoltagedrop,withmoderateleakage.Typicalapplicationsareinswitchingpowersupplies,converters,free-wheelingdiodes,andreversebatteryprotection. ?Lowprofile,axialleaded

IRF

International Rectifier

1N5819U

Aerospace45VpowerSchottkyrectifier

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

1N5819UR

1AMPSCHOTTKYBARRIERRECTIFIERS

?1N5819UR-1AND1N6761UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/586 ?1AMPSCHOTTKYBARRIERRECTIFIERS ?HERMETICALLYSEALED ?LEADLESSPACKAGEFORSURFACEMOUNT ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5819UR

1AMPSCHOTTKYBARRIERRECTIFIERS

?1N5819UR-1AND1N6761UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/586 ?1AMPSCHOTTKYBARRIERRECTIFIERS ?HERMETICALLYSEALED ?LEADLESSPACKAGEFORSURFACEMOUNT ?METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

詳細(xì)參數(shù)

  • 型號：

    1N5819SX

  • 制造商：

    Microwave Semiconductor

供應(yīng)商型號品牌批號封裝庫存備注價格
DINC
N/A
2331
詢價
FEGLOBALELE
2017+
NA
28562
只做原裝正品假一賠十!
 詢價
Diodes
24+
DO-41
7500
詢價
ON
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
 詢價
DiodesZetex
18+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)
 詢價
DIODES
23+
NA
5000
專業(yè)電子元器件供應(yīng)鏈正邁科技特價代理QQ1304306553
 詢價
DIODES
22+23+
DO41
30016
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
DIODES/美臺
22+
DO41
90000
正規(guī)代理渠道假一賠十
 詢價
原裝DIODES
19+
SMD
20000
原裝需要可訂貨
 詢價
DIODES/美臺
20+
SMD
88800
DIODES原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
更多1N5819SX供應(yīng)商 更新時間2025-2-15 16:20:00

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