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21N50C3

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?QualifiedaccordingtoJEDEC)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISPP21N50C3

N-ChannelMOSFETTransistor

?DESCRITION ?Newrevolutionaryhighvoltagetechnology ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performancea

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISPW21N50C3

N-ChannelMOSFETTransistor

?DESCRITION ?ImprovedTransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA21N50C3

NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220Ultralowgatecharge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA21N50C3

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA21N50C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA21N50C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB21N50C3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=21A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPB21N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?QualifiedaccordingtoJEDEC)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB21N50C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號品牌批號封裝庫存備注價格
INF
24+
220-220F
163000
一級代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價格合理
 詢價
INF進(jìn)口原
17+
220-220F
6200
詢價
英飛凌
24+
4796
詢價
INFINEON英飛凌
23+
TO-3P
5000
原裝正品,假一罰十
 詢價
INFINEO
18+
TO-220F
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價
INFINEON
專業(yè)鐵帽
TO-220
8
原裝鐵帽專營,代理渠道量大可訂貨
 詢價
INF
20+
220-220F
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
INFINEON/英飛凌
2022+
8
全新原裝 貨期兩周
 詢價
INFINEON/英飛凌
2021+
TO-220
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
INFINEON
21+
TO220
15
原裝現(xiàn)貨假一賠十
 詢價
更多21N50C3供應(yīng)商 更新時間2025-2-11 15:07:00

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