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2N7002KW

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

2N7002KW

N-Ch Small Signal MOSFET with ESD Protection

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2N7002KW

N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

YANGJIEYangzhou yangjie electronic co., ltd

揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司

2N7002KW

N-Channel Enhancement Mode Field Effect Transistor

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?PbFree/RoHSCompliant ?ESDHBM=1000VasperJESD22A114andESDCDM=1500VasperJESD22C101

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7002KW

N-Channel 60-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:2Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective20

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

2N7002KW

N-Channel Enhancement MOSFET

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

2N7002KW

N-Channel SMD MOSFET ESD Protection

Features ?RDS(ON)=3.0Ω,VGS=10V,@60V/0.50A ?RDS(ON)=4.0Ω,VGS=4.5V,@60V/0.20A ?ESDproduction2kV(Humanbodymode) ?Advancedtrenchprocesstechnology. ?Highdensitycelldesignforultralowon-resistance. ?Speciallydesignedforbatteryoperatedsystem, solid-staterelaysdr

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

2N7002KW

N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION TheUTC2N7002KWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgatevoltagesduringoperation.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *LowReverseTransferCapacitance *ESDProtected *FastSwitchingCap

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7002KW

N-Channel MOSFET

N-ChannelMOSFET FEATURE ●HighdensitycelldesignforLowRDS(on) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2N7002KW

N-Channel Enhancement Mode Field Effect Transistor

Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?LowInput/OutputLeakage ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponreques

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002KW

N-Ch Small Signal MOSFET with ESD Protection

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SECELECTRONICS

SEC Electronics Inc.

2N7002KW

N-Channel Enhancement Mode MOSFET

Features Lowon-resistance ESDprotectedgateupto2kVHBM High-speedswitching Drivecircuitscanbesimple Paralleluseiseasy

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

2N7002KW

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

2N7002KW_R1_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

2N7002KW_R2_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

2N7002KW_V01

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

2N7002KWA

N-Channel Enhancement Mode Field Effect Transistor

Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?LowInput/OutputLeakage ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponreques

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002KW-AU

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ?RDS(ON),VGS@10V,ID@500mA

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

2N7002KW-AU_R1_000A1

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ?RDS(ON),VGS@10V,ID@500mA

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

2N7002KW-CAR

N-Channel MOSFET

FEATURE HighdensitycelldesignforLowRDS(on) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected -CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcap

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

詳細(xì)參數(shù)

  • 型號：

    2N7002KW

  • 功能描述：

    MOSFET NCHAN Enhance MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ON
21+
SOT323
6000
原裝正品可支持驗(yàn)貨,歡迎咨詢
 詢價(jià)
PANJIT
2024+
SOT-323
32560
原裝優(yōu)勢絕對有貨
 詢價(jià)
FAIRCHILD/仙童
24+
SOD-323
45000
熱賣優(yōu)勢現(xiàn)貨
 詢價(jià)
ON-SEMI
22+
N/A
3000
原裝正品 香港現(xiàn)貨
 詢價(jià)
長電
24+
SOT-323
65000
一級代理/全新現(xiàn)貨/長期供應(yīng)!!
 詢價(jià)
PANJIN
2019+
SOT323
36000
原盒原包裝 可BOM配套
 詢價(jià)
FAIRCHILD/仙童
20+原裝正品
SOT323
6000
大量現(xiàn)貨,免費(fèi)發(fā)樣。
 詢價(jià)
FSC
1628+
SOT323
12
原裝庫存有訂單來談優(yōu)勢
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PANJIT/強(qiáng)茂
22+
SOT323
996000
只做原裝進(jìn)口現(xiàn)貨
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CJ/長電
2020+PB
SOT-323
11560
原裝正品 可含稅交易
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更多2N7002KW供應(yīng)商 更新時(shí)間2025-1-9 16:00:00

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