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2SD213

isc Silicon NPN Power Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SD2130

NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications ●HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) ●Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=3A,IB=10mA) ●Zenerdiodeincludedbetweencollectorandbase.

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SD2131

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High-PowerSwitchingApplications HammerDrive,PulseMotorDriveApplications ?HighDCcurrentgain:hFE=2000(min)(VCE=3V,IC=3A) ?Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=3A) ?Zenerdiodeincludedbetweencollectorandbase. ?Unclampedinductiveloadenergy:E=

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SD2133

Silicon NPN epitaxial planar type

SiliconNPNepitaxialplanartype Forlow-frequencypoweramplificationdriver ■Features ?Lowcollector-emittersaturationvoltageVCE(sat)

PanasonicPanasonic Semiconductor

松下松下電器

2SD2134

Silicon PNP epitaxial planar type

Forlow-frequencydriver/highpoweramplification Complementaryto2SD2134 ■Features ?ExcellentcurrentICcharacteristicsofforwardcurrenttransferratiohFEvs.collector ?HightransitionfrequencyfT ?Allowingautomaticinsertionwithradialtaping

PanasonicPanasonic Semiconductor

松下松下電器

2SD2136

Silicon NPN triple diffusion planar type

Forpoweramplification Complementaryto2SB1416 ■Features ?HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity. ?Lowcollector-emittersaturationvoltageVCE(sat) ?Allowingsupplywiththeradialtaping

PanasonicPanasonic Semiconductor

松下松下電器

2SD2136

Silicon PNP epitaxial planar type

Forlow-frequencypoweramplification Complementaryto2SD2136 ■Features ?HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ?Lowcollector-emittersaturationvoltageVCE(sat) ?Allowingautomaticinsertionwithradialtaping

PanasonicPanasonic Semiconductor

松下松下電器

2SD2136

POWER TRANSISTOR

POWERTRANSISTOR DESCRIPTION TheUTC2SD2136isdesignedforpoweramplification. FEATURES *HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity. *LowcollectortoemittersaturationvoltageVCE(SAT). *Allowingsupplywiththeradialtaping.

UTCUnisonic Technologies

友順友順科技股份有限公司

2SD2136

NPN Plastic Encapsulated Transistor

FEATURES ●Lowfrequencypoweramplifier ●LowCollector-EmitterSaturationVoltageVCE(sat) ●HighForwardCurrentTransferRatiohFEWhichhasSatisfactoryLinearity CollectortoBaseVoltageVCBO60V CollectortoEmitterVoltageVCEO60V EmittertoBaseVoltageVEBO6V CollectorCurrent

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SD2136

TRANSISTOR (NPN)

FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

晶體管資料

  • 型號(hào)：

    2SD213

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-NPN

  • 性質(zhì)：

    低頻或音頻放大 （LF）_開關(guān)管 （S）_功率放大 （L

  • 封裝形式：

    貼片封裝

  • 極限工作電壓：

    110V

  • 最大電流允許值：

    10A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    2

  • 可代換的型號(hào)：

    BDW21C,BDX11,BDY19,BDY74,2N3055,2N3442,2N3773,2N5632,2N5633,3DA74C,

  • 最大耗散功率：

    100W

  • 放大倍數(shù)：

  • 圖片代號(hào)：

    E-44

  • vtest：

    110

  • htest：

    999900

  • atest：

    10

  • wtest：

    100

詳細(xì)參數(shù)

  • 型號(hào)：

    2SD213

  • 功能描述：

    2SD213 SIL N9H1D

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
24+
TO-3
10000
全新
 詢價(jià)
SK
1738+
TO-3
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價(jià)
TOS
23+
TO
20000
正品原裝貨價(jià)格低
 詢價(jià)
PANASONIC
1000
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
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ROHM
24+
原廠封裝
2500
原裝現(xiàn)貨假一罰十
 詢價(jià)
TOSHIBA
16+
TO-220
10000
全新原裝現(xiàn)貨
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PANASONIC
23+
MT-4
7750
全新原裝優(yōu)勢(shì)
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TOSHIBA
2020+
TO-126
1800
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
松下PANASO
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
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PANASONIC
24+
TO-220F
5000
只做原裝公司現(xiàn)貨
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更多2SD213供應(yīng)商 更新時(shí)間2025-2-10 16:00:00

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