首頁 >2SJ526-VB>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SiliconPChannelMOSFET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.11?typ. ?Lowdrivecurrent ?4Vgatedrivedevices ?Highspeedswitching | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPChannelMOSFETHighSpeedPowerSwitching Features ?Lowon-resistanceRDS(on)=0.11?typ. ?Lowdrivecurrent ?4Vgetedrivedevices ?Highspeedswitching | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=-10V DESCRIPTION ·HighfastswitchingPowerSupply | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.11?typ. ?Lowdrivecurrent ?4Vgatedrivedevices ?Highspeedswitching | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
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