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2SK3056-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056-ZJ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?LowOn-StateResistance RDS(on)1=34m?MAX.(VGS=10V,ID=16A) RDS(on)2=50m?MAX.(VGS=4.0V,ID=16A) ?LowCiss:Ciss=920pFTYP. ?Built

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3056-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?LowOn-StateResistance RDS(on)1=34m?MAX.(VGS=10V,ID=16A) RDS(on)2=50m?MAX.(VGS=4.0V,ID=16A) ?LowCiss:Ciss=920pFTYP. ?Built

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3056-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056-S

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?LowOn-StateResistance RDS(on)1=34m?MAX.(VGS=10V,ID=16A) RDS(on)2=50m?MAX.(VGS=4.0V,ID=16A) ?LowCiss:Ciss=920pFTYP. ?Built

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    2SK3056-Z

  • 制造商：

    Renesas Electronics Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
TOS
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
NEC
24+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
NEC
24+
6540
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
NEC
24+
TO-263
36800
詢價
NEC
22+
SOT-263
20000
保證原裝正品,假一陪十
 詢價
NEC
23+
TO-263262
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
NEC
22+
SOT-263
100000
代理渠道/只做原裝/可含稅
 詢價
NEC
2023+環(huán)保現(xiàn)貨
TO-263
18000
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價
NEC
23+
2800
正品原裝貨價格低
 詢價
NEC
2023+
TO-263
50000
原裝現(xiàn)貨
 詢價
更多2SK3056-Z供應(yīng)商 更新時間2025-3-8 10:00:00

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