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2SK3062

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5m?MAX.(VGS=10V,ID=35A) RDS(on)2=12m?MAX.(VGS=4.0V,I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3062

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5m?MAX.(VGS=10V,ID=35A) RDS(on)2=12m?MAX.(VGS=4.0V,I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3062-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062-ZJ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5m?MAX.(VGS=10V,ID=35A) RDS(on)2=12m?MAX.(VGS=4.0V,I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3062-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062-ZJ

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5m?MAX.(VGS=10V,ID=35A) RDS(on)2=12m?MAX.(VGS=4.0V,I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數(shù)

  • 型號：

    2SK3062

  • 制造商：

    Renesas Electronics Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
17+
TO-220
6200
詢價
NEC
23+
TO-220
35890
詢價
NEC
24+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
NEC
24+
TO220
100000
原裝正品現(xiàn)貨
 詢價
NEC
24+
6540
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
NEC
2447
TO-220
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
NEC
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NEC
2022
TO220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
NEC
22+
TO-220
6000
十年配單,只做原裝
 詢價
NEC
2022+
TO220
57550
詢價
更多2SK3062供應(yīng)商 更新時間2025-3-7 9:27:00

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