2SK3573中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書
2SK3573規(guī)格書詳情
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3573 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
? 4.5 V drive available
? Low on-state resistance
RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 42 A)
? Low gate charge
QG = 68 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 83 A)
? Surface mount device available
