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3P

型號(hào)：2N7002；Package：SOT-23；Small Signal MOSFET Transistor

SmallSignalMOSFETTransistor FEATURES ●HighDensityCellDesignForLowRDS(ON)。 ●VoltageControlledSmallSwitch. ●RuggedandReliable. ●HighSaturationCurrentCapability. APPLICATIONS ●N-channelenhancementmodeeffecttransistor. ●Switchingapplication.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

3P

型號(hào)：ADL5504ACBZ-P2；Package：WLCSP；450 MHz to 6000 MHz TruPwr Detector

FEATURES Truermsresponsedetector Excellenttemperaturestability ±0.25dBrmsdetectionaccuracyvs.temperature Over35dBinputpowerdynamicrange,inclusiveofcrestfactor RFbandwidthsfrom450MHzto6000MHz 500Ωinputimpedance Single-supplyoperation:2.5Vto3.3V Lowpower

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

3P

型號(hào)：ADL5504ACBZ-P7；Package：WLCSP；450 MHz to 6000 MHz TruPwr Detector

FEATURES Truermsresponsedetector Excellenttemperaturestability ±0.25dBrmsdetectionaccuracyvs.temperature Over35dBinputpowerdynamicrange,inclusiveofcrestfactor RFbandwidthsfrom450MHzto6000MHz 500Ωinputimpedance Single-supplyoperation:2.5Vto3.3V Lowpower

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

3P

型號(hào)：BQ29716DSER；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features ?Inputvoltagerangepack+:VSS–0.3Vto12V ?FETdrive: –CHGandDSGFETdriveoutput ?VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) ?Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

3P

型號(hào)：BQ29716DSET；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features ?Inputvoltagerangepack+:VSS–0.3Vto12V ?FETdrive: –CHGandDSGFETdriveoutput ?VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) ?Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

3P

型號(hào)：CMDZ22L；Package：SOD-323；SURFACE MOUNT SILICON LOW LEVEL ZENER DIODE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMDZ1L8SeriesSiliconLowLevelZenerDiodeisahighqualityvoltageregulator,manufacturedinaSUPERmini?surfacemountpackage,designedforapplicationsrequiringalowoperatingcurrent,lowleakage,andasharpknee. MARKINGCODE:SEEMARKINGCODES

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

3P

型號(hào)：CMDZ22L；Package：SOD-323；SUPERmini. LOW LEVEL ZENER DIODE 250mW, 2.4 VOLTS THRU 36 VOLTS

DESCRIPTION: TheCENTRALSEMICONDUCTORCMDZ1L8SeriesSiliconLowLevelZenerDiodeisahighqualityvoltageregulator,manufacturedinaSUPERmini?surfacemountpackage,designedforapplicationsrequiringalowoperatingcurrent,lowleakage,andasharpknee. MARKINGCODE:SEEMARKINGCODES

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

3P

型號(hào)：CMDZ22L；Package：SOD-323；SUPERmini LOW LEVEL ZENER DIODE 250mW, 1.8 VOLTS THRU 47 VOLTS

DESCRIPTION: TheCENTRALSEMICONDUCTORCMDZ1L8SeriesSiliconLowLevelZenerDiodeisahighqualityvoltageregulator,manufacturedinaSUPERmini?surfacemountpackage,designedforapplicationsrequiringalowoperatingcurrent,lowleakage,andasharpknee. MARKINGCODE:SEEMARKINGCODES

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

3P

型號(hào)：PESD2CANFD24L-U；Package：SC-70；ESD protection for In-vehicle networks

1.Generaldescription ESDprotectiondeviceinasmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackage designedtoprotecttwoautomotiveIn-vehiclenetworkbuslinesfromthedamagecausedby ElectroStaticdischarge(ESD)andothertransients. 2.Featuresandbenefits ?Revers

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

3P

型號(hào)：PESD3V3T1BLS；Package：DFN1006BD-2；Bidirectional ESD protection diode

1.Generaldescription BidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignalline fromthedamagecausedbyESDandothertransients. ThedeviceishousedinaleadlessultrasmallDFN1006BD-2(SOD882BD)Surface-Mounted Device(SMD)plasticpackagewithsi

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    3P

  • 功能描述：

    MOSFET N-CHANNEL 60V 115mA

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
恩XP
15+
SOT23
30000
全新原裝
 詢價(jià)
2015+
50
公司現(xiàn)貨庫(kù)存
 詢價(jià)
2015+
50
公司現(xiàn)貨庫(kù)存
 詢價(jià)
ON
17+18+
SOT23
488459
原廠原裝,本地現(xiàn)貨庫(kù)存,假一罰十!
 詢價(jià)
長(zhǎng)電
11+
SOT23
50000
深圳現(xiàn)貨
 詢價(jià)
ON
21+
SOT23
30000
只做原裝 有單來(lái)談
 詢價(jià)
恩XP
24+/25+
SOT236
99000
100%原裝正品真實(shí)庫(kù)存,支持實(shí)單
 詢價(jià)
ON-SEMI
22+
N/A
9000
原裝正品 香港現(xiàn)貨
 詢價(jià)
恩XP
1118
SOT236
340
現(xiàn)貨庫(kù)存,有單來(lái)談
 詢價(jià)
恩XP
16+
SOT23
12350
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
 詢價(jià)
更多3P供應(yīng)商 更新時(shí)間2021-9-16 14:01:00

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