74AUP1G08GX集成電路（IC）的門反相器規(guī)格書PDF中文資料

廠商型號	74AUP1G08GX
參數屬性	74AUP1G08GX 封裝/外殼為4-XFDFN 裸露焊盤；包裝為卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶；類別為集成電路（IC）的門反相器；產品描述：IC GATE AND 1CH 2-INP 5X2SON
功能描述	Low-power 2-input AND gate
絲印標識	PE
封裝外殼	X2SON5 / 4-XFDFN 裸露焊盤
文件大小	273.54 Kbytes
頁面數量	18 頁
生產廠商	Nexperia B.V. All rights reserved
企業(yè)簡稱	NEXPERIA【安世】
中文名稱	安世半導體(中國)有限公司官網
原廠標識
數據手冊	下載地址一下載地址二到原廠下載
更新時間	2025-2-11 22:30:00

1. General description

The 74AUP1G08 is a single 2-input AND gate. Schmitt-trigger action at all inputs makes the circuit

tolerant of slower input rise and fall times. This device ensures very low static and dynamic power

consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for

partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the

potentially damaging backflow current through the device when it is powered down.

2. Features and benefits

? Wide supply voltage range from 0.8 V to 3.6 V

? CMOS low power dissipation

? High noise immunity

? Overvoltage tolerant inputs to 3.6 V

? Low noise overshoot and undershoot < 10 of VCC

? IOFF circuitry provides partial Power-down mode operation

? Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

? Low static power consumption; ICC = 0.9 μA (maximum)

? Complies with JEDEC standards:

? JESD8-12 (0.8 V to 1.3 V)

? JESD8-11 (0.9 V to 1.65 V)

? JESD8-7 (1.65 V to 1.95 V)

? JESD8-5 (2.3 V to 2.7 V)

? JESD8C (2.7 V to 3.6 V)

? ESD protection:

? HBM JESD22-A114F Class 3A exceeds 5000 V

? MM JESD22-A115-A exceeds 200 V

? CDM JESD22-C101E exceeds 1000 V

? Multiple package options

? Specified from -40 °C to +85 °C and -40 °C to +125 °C