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型號：BC846BSH；Package：TSSOP6；65 V, 100 mA NPN/NPN general-purpose double transistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors ?High-temperatureapplicationsupto175°C

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型號：BC846BSH-Q；Package：TSSOP6；65 V, 100 mA NPN/NPN general-purpose double transistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors ?High-temperatureapplicationsupto175°C ?QualifiedaccordingtoA

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型號：BZX38450-C9V1；Package：SOD323；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤300mW ?Toleranceseries:approximately±5 ?Workingvoltagerange:nominal1.8Vto10V ?Specifie

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型號：BZX38450-C9V1-Q；Package：SOD323；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤300mW ?Toleranceseries:approximately±5 ?Workingvoltagerange:nominal1.8Vto10V ?Specifie

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型號：BZX8850S-C12；Package：SOD882BD；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Totalpowerdissipation:≤365mW ?Toleranceseries:approximately±5 ?Workin

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型號：BZX8850S-C12-Q；Package：DFN1006BD-2；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Totalpowerdissipation:≤365mW ?Toleranceseries:approximately±5 ?Workin

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型號：PBRN123ET；Package：SOT23；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

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型號：PBRN123ET；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

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型號：PBRN123ET-Q；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

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型號：RT8816AGQW；Package：WQFN-20L；Dual-Phase PWM Controller with PWM-VID Reference

Features Dual-PhasePWMController PowerStateIndicator ?1P-CCM/2P-CCM/1P-DEM/2P-DEM TwoEmbeddedMOSFETDriversandEmbedded SwitchingBootDiode Support1.8VPWM-VIDInterface ExternalReferenceInputControl PWM-VIDDynamicVoltageControl DynamicPhaseNumberControl LosslessRDS(O