ACE12008A中文資料ACE數(shù)據(jù)手冊PDF規(guī)格書

Description

The ACE12008A is the N&P Channel enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology. This high-density process is especially tailored to

minimize on-state resistance and provide superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer power management and other battery

powered circuits where high-side switching, low in-line power loss, and resistance to transients are

needed.

Features

? N-Channel

20V/0.65A, RDS(ON)=380m?@VGS=4.5V

20V/0.55A, RDS(ON)=450m?@VGS=2.5V

20V/0.45A, RDS(ON)=800m?@VGS=1.8V

? P-Channel

-20V/0.45A, RDS(ON)= 520m? @VGS=-4.5V

-20V/0.35A, RDS(ON)= 700m? @VGS=-2.5V

-20V/0.25A, RDS(ON)= 1500m? @VGS=-1.8V

? Super high-density cell design for extremely low RDS (ON)

? Exceptional on-resistance and maximum DC current capability

Application

? Power Management in Note book

? Portable Equipment

? Battery Powered System

? DC/DC Converter

? Load Switch

? DSC

? LCD Display inverter