首頁 >ADC3711CCN-NEW>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SAWComponentsLow-LossFilter315,00MHz | EPCOSepcos 愛普科斯 | EPCOS | ||
N-Channel30-V(D-S)MOSFET FEATURES TrenchFET??PowerMOSFET ?100%RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
RobustProgrammable2DPositionSensorFamilywithArbitraryOutputFunction | TDKTDK Corporation TDK株式會社東電化（中國）投資有限公司 | TDK | ||
RobustProgrammable2DPositionSensorFamilywithArbitraryOutputFunction | TDKTDK Corporation TDK株式會社東電化（中國）投資有限公司 | TDK | ||
N-ChannelMOSFETTransistor DESCRITION ?reliabledeviceforuseinawidevarietyofapplications FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤6.0m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?HighFrequencyBuckConvertersForServerProcessorPowerSynchronousFET ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤6.5m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?HighFrequencySynchronousBuckConvertersForComputerProcessorPower ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤5.7m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=20V,Rds(on)max=6.0mohm,Id=110A?? SMPSMOSFET Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on)at4.5VVGS ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighFrequencyIsolatedDC-DC ConverterswithSynchronousRectification forTelecomandIndustrialUse ●HighFrequencyBuckConv | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor DESCRITION ?reliabledeviceforuseinawidevarietyofapplications FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤6.0m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=20V,Rds(on)max=6.0mohm,Id=110A?? SMPSMOSFET Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on)at4.5VVGS ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighFrequencyIsolatedDC-DC ConverterswithSynchronousRectification forTelecomandIndustrialUse ●HighFrequencyBuckConv | IRF International Rectifier | IRF |
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