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ADUM4146ARWZ-RL中文資料亞德諾數(shù)據(jù)手冊PDF規(guī)格書

ADUM4146ARWZ-RL
廠商型號

ADUM4146ARWZ-RL

功能描述

11 A High Voltage Isolated Bipolar Gate Driver with Fault Detection, Miller Clamp

文件大小

1.03799 Mbytes

頁面數(shù)量

17

生產(chǎn)廠商 Analog Devices
企業(yè)簡稱

AD亞德諾

中文名稱

亞德諾半導(dǎo)體技術(shù)有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-4-4 14:28:00

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ADUM4146ARWZ-RL規(guī)格書詳情

GENERAL DESCRIPTION

The ADuM4146 is a single-channel gate driver specifically optimized

for driving silicon carbide (SiC), metal-oxide semiconductor

field effect transistors (MOSFETs). Analog Devices, Inc., iCoupler?

technology provides isolation between the input signal and the

output gate drive.

The ADuM4146 includes a Miller clamp to provide robust SiC turn

off with a single-rail supply when the gate voltage drops to less

than 2 V. Operation with unipolar or bipolar secondary supplies is

possible with or without the Miller clamp operation.

The Analog Devices chip scale transformers also provide isolated

communication of control information between the high voltage and

low voltage domains of the chip. Information on the status of the

chip can be read back from dedicated outputs. Control of resetting

the device after a fault on the secondary side is performed on the

primary side of the device.

Integrated onto the ADuM4146 is a desaturation detection circuit

that provides protection against high voltage short-circuit SiC operation.

The desaturation protection contains noise reducing features,

such as a 300 ns masking time after a switching event to mask

voltage spikes due to initial turn on (see Figure 17). An optional

internal 500 μA current source allows low device count, and the

internal blanking switch allows the addition of an external current

source if more noise immunity is needed.

The secondary undervoltage lockout (UVLO) is set to 14.5 V (typical)

for Grade A and is set to 11.5 V (typical) for Grade B and

Grade C with common SiC and insulated gate bipolar transistor

(IGBT) levels taken into consideration.

FEATURES

? 11 A short-circuit source current (0 Ω gate resistance)

? 9 A short-circuit sink current (0 Ω gate resistance)

? 4.61 A peak current (2 Ω gate resistance)

? Output power device resistance: <1 Ω

? Output voltage range up to 30 V

? Multiple UVLO options on VDD2

? Grade A: 14.5 V (typical) UVLO on VDD2 positive going threshold

? Grade B and Grade C: 11.5 V (typical) UVLO on VDD2 positive

going threshold

? VDD1 input voltage range from 2.5 V to 6 V

? Desaturation protection

? Soft shutdown on desaturation fault

? Multiple desaturation detect comparator voltages

? Grade B: 9.2 V (typical)

? Grade A and Grade C: 3.5 V (typical)

? Miller clamp output with gate sense input

? Isolated fault and ready functions

? Low propagation delay: 75 ns (typical)

? Operating temperature range: ?40°C to +125°C

? Creepage distance: 8.3 mm minimum

? CMTI: 100 kV/μs

? Safety and regulatory approvals (pending)

? 5000 V rms for 1 minute per UL 1577

? CSA Component Acceptance Notice 5A

? DIN V VDE V 0884-11

? VIORM = 2150 V peak

APPLICATIONS

? SiC/MOSFET/IGBT gate drivers

? Photovoltaic (PV) inverters

? Motor drives

? Power supplies

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