AGR18090EF中文資料TriQuint數(shù)據(jù)手冊PDF規(guī)格書

Introduction

The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industry-standard package and is capable of delivering a typical output power of 90 W, which makes it ideally suited for today’s wireless base station RF power amplifier applications.

Features

Typical performance ratings for GSM EDGE

(f = 1.840 GHz, POUT = 30 W):

— Modulation spectrum:

@ ±400 kHz = –63 dBc.

@ ±600 kHz = –73 dBc.

— Error vector magnitude (EVM) = 1.7.

— Gain = 15 dB.

— Drain Efficiency = 31.

Typical continuous wave (CW) performance over

entire digital communication system (DCS) band:

— P1dB: 90 W typ.

— Power gain: @ P1dB = 14 dB.

— Efficiency @ P1dB = 50 typ.

— Return loss: –10 dB.

High-reliability gold-metalization process.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

Internally matched.

High gain, efficiency, and linearity.

Integrated ESD protection.

90 W minimum output power.

Device can withstand 10:1 voltage standing wave

ratio (VSWR) at 26 Vdc, 1.840 GHz, 90 W CW output power.

Large signal impedance parameters available.