ALD1103SBL中文資料ADL數(shù)據(jù)手冊(cè)PDF規(guī)格書

FEATURES

? Thermal tracking between N-channel and P-channel pairs

? Low threshold voltage of 0.7V for both N-channel &

P-channel MOSFETS

? Low input capacitance

? Low Vos -- 10mV

? High input impedance -- 1013Ω typical

? Low input and output leakage currents

? Negative current (IDS) temperature coefficient

? Enhancement mode (normally off)

? DC current gain 109

? Matched N-channel and matched P-channel in one package

? RoHS compliant

GENERAL DESCRIPTION

The ALD1103 is a monolithic dual N-channel and dual P-channel

matched transistor pair intended for a broad range of analog applications.

These enhancement-mode transistors are manufactured with Advanced

Linear Devices' enhanced ACMOS silicon gate CMOS process. It

consists of an ALD1101 N-channel MOSFET pair and an ALD1102 Pchannel

MOSFET pair in one package.

The ALD1103 offers high input impedance and negative current temperature

coefficient. The transistor pair is matched for minimum offset voltage

and differential thermal response, and it is designed for precision signal

switching and amplifying applications in +2V to +10V systems where low

input bias current, low input capacitance and fast switching speed are

desired. Since these are MOSFET devices, they feature very large

(almost infinite) current gain in a low frequency, or near DC, operating

environment. When used in pairs, a dual CMOS analog switch can be

constructed. In addition, the ALD1103 is intended as a building block for

differential amplifier input stages, transmission gates, and multiplexer

applications.

The ALD1103 is suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result in extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 50pA at room temperature. For example, DC beta of the

device at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.

APPLICATIONS

? Precision current mirrors

? Complementary push-pull linear drives

? Analog switches

? Choppers

? Differential amplifier input stage

? Voltage comparator

? Data converters

? Sample and Hold

? Analog inverter

? Precision matched current sources