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AM28F010-150JI

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERALDESCRIPTION TheAm28F010isa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedto

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM28F010-150JIB

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERALDESCRIPTION TheAm28F010isa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedto

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM28F010-150PC

1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory

GENERALDESCRIPTION TheAm28F010isa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedto

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM28F010-150PCB

1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory

GENERALDESCRIPTION TheAm28F010isa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedto

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM28F010-150PE

1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory

GENERALDESCRIPTION TheAm28F010isa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedto

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM28F010-150PEB

1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory

GENERALDESCRIPTION TheAm28F010isa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedto

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM28F010-150PI

1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory

GENERALDESCRIPTION TheAm28F010isa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedto

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM28F010-150PIB

1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory

GENERALDESCRIPTION TheAm28F010isa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedto

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

E28F010-150

1024K(128Kx8)CMOSFLASHMEMORY

28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit

IntelIntel Corporation

英特爾

E28F010-150

28F0101024K(128KX8)CMOSFLASHMEMORY

IntelIntel Corporation

英特爾

F28F010-150

1024K(128Kx8)CMOSFLASHMEMORY

28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit

IntelIntel Corporation

英特爾

N28F010-150

28F0101024K(128KX8)CMOSFLASHMEMORY

IntelIntel Corporation

英特爾

N28F010-150

1024K(128Kx8)CMOSFLASHMEMORY

28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit

IntelIntel Corporation

英特爾

P28F010-150

1024K(128Kx8)CMOSFLASHMEMORY

28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit

IntelIntel Corporation

英特爾

P28F010-150

28F0101024K(128KX8)CMOSFLASHMEMORY

IntelIntel Corporation

英特爾

TE28F010-150

28F0101024K(128KX8)CMOSFLASHMEMORY

IntelIntel Corporation

英特爾

TN28F010-150

28F0101024K(128KX8)CMOSFLASHMEMORY

IntelIntel Corporation

英特爾

TP28F010-150

28F0101024K(128KX8)CMOSFLASHMEMORY

IntelIntel Corporation

英特爾

詳細(xì)參數(shù)

  • 型號(hào):

    AM28F010-150JI

  • 制造商:

    AMD

  • 制造商全稱:

    Advanced Micro Devices

  • 功能描述:

    1 Megabit(128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

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原廠原包
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更多AM28F010-150JI供應(yīng)商 更新時(shí)間2025-1-7 14:06:00