零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AOT10B60D | 600V, 10A Alpha IGBT with Diode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | |
AOT10B60D | 包裝:管件 封裝/外殼:TO-220-3 類別:分立半導體產品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 20A 163W TO220 | Alpha \u0026 Omega Semiconductor Inc. Alpha \u0026 Omega Semiconductor Inc. | Alpha \u0026 Omega Semiconductor Inc. | |
AOTF10B60D | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
FRED | NIEC Nihon Inter Electronics Corporation | NIEC | ||
FRD-ForPowerFactorImprovementHighFrequencyRecification FEATURES *FullyMoldedIsolation *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability | NIEC Nihon Inter Electronics Corporation | NIEC | ||
FRED | NIEC Nihon Inter Electronics Corporation | NIEC | ||
FRED | NIEC Nihon Inter Electronics Corporation | NIEC | ||
FORPOWERFACTORIMPROVEMENTHIGHFREQUENCYRECTIFICATION FEATURES *FullyMoldedIsolationCase *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability | NIEC Nihon Inter Electronics Corporation | NIEC | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien | IRF International Rectifier | IRF | ||
ControlIntegratedPOwerSystem | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ControlIntegratedPOwerSystem | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ControlIntegratedPOwerSystem | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru | IRF International Rectifier | IRF | ||
PowerSchottkyRectifier-10Amp60Volt | SIRECTSirectifier Global Corp. 矽萊克半導體深圳市矽萊克半導體有限公司 | SIRECT |
產品屬性
- 產品編號:
AOT10B60D
- 制造商:
Alpha \u0026 Omega Semiconductor Inc.
- 類別:
分立半導體產品 > 晶體管 - UGBT、MOSFET - 單
- 系列:
Alpha IGBT?
- 包裝:
管件
- 不同?Vge、Ic 時?Vce(on)(最大值):
1.8V @ 15V,10A
- 開關能量:
260μJ(開),70μJ(關)
- 輸入類型:
標準
- 25°C 時 Td(開/關)值:
10ns/72ns
- 測試條件:
400V,10A,30 歐姆,15V
- 工作溫度:
-55°C ~ 175°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3
- 供應商器件封裝:
TO-220
- 描述:
IGBT 600V 20A 163W TO220
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
AOS/萬代 |
2019+ |
TO220 |
3333 |
原廠渠道 可含稅出貨 |
詢價 | ||
AOS/萬代 |
24+ |
TO220 |
333888 |
專業(yè)直銷原裝AOS一系列可訂貨 |
詢價 | ||
AOS |
2024+ |
N/A |
70000 |
柒號只做原裝 現貨價秒殺全網 |
詢價 | ||
AOS |
2016+ |
TO-220 |
6528 |
房間原裝進口現貨假一賠十 |
詢價 | ||
AOS |
2020+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
AOS/萬代 |
24+ |
65230 |
詢價 | ||||
AOS/萬代 |
23+ |
TO220 |
24190 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
ALPHAO |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨 |
詢價 | ||
AOS/萬代 |
21+ |
TO220 |
30000 |
優(yōu)勢供應 實單必成 可13點增值稅 |
詢價 | ||
AOS |
21+ |
TO-220 |
3787 |
原裝現貨假一賠十 |
詢價 |
相關規(guī)格書
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相關庫存
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- AOZ1021AI
- AOZ1024DI
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- AOZ1037PI
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- AOZ1092DI
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- AOZ1210AI
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- AOZ1232QI-01
- AOZ1280CI