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APT1004R2BN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004R2BN

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT1004R2AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT1004R2CN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT1004R2GN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT1004R2KN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT1004R2KN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

SML1004R2GXN

4THGENERATIONMOSFETN??HANNELENHANCEMENTMODEHIGHVOLTAGEISOLATEDPOWERMOSFETS

SEME-LAB

Seme LAB

詳細參數(shù)

  • 型號:

    APT1004R2BN

  • 制造商:

    ADPOW

  • 制造商全稱:

    Advanced Power Technology

  • 功能描述:

    N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

供應商型號品牌批號封裝庫存備注價格
APT
24+
8866
詢價
APT
22+
原廠原封
8200
原裝現(xiàn)貨庫存.價格優(yōu)勢!!
詢價
APT
24+
TO-247
564
詢價
ADPOW
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
詢價
APT
22+
TO-247
8000
原裝正品支持實單
詢價
APT
23+
2800
正品原裝貨價格低
詢價
MICROCHIP/微芯
24+
SMT
18000
誠以養(yǎng)德,用芯做事,全新原裝原盒原標出貨。
詢價
APT
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
詢價
APT
24+
NA
3500
原裝現(xiàn)貨,可開13%稅票
詢價
APT
2020+
原廠封裝
350000
100%進口原裝正品公司現(xiàn)貨庫存
詢價
更多APT1004R2BN供應商 更新時間2025-1-26 16:30:00