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AR1L3N

on-chip resistor PNP silicon epitaxial transistor

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?HighcurrentdrivessuchasICoutputandactuatoravailable ?On-chipbiasresistor ?Lowpowerconsumptionduringdrive

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BA1L3M

On-chipresistorNPNSiliconEpitaxialTransistor

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=4.7k?,R2=4.7k?) ?ComplementarytransistorwithBN1L3M

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BA1L3M

CMPOUNDTRANSISTOR

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BA1L3N

COMPOUNDTRANSISTOR

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) ?ComplementarytransistorwithBN1L3N

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BA1L3N

on-chipresistorNPNsiliconepitaxialtransistor

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=4.7k?,R2=10k?) ?ComplementarytransistorwithBN1L3N

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BA1L3Z

NPNSILICONTRANSISTOR

DESCRIPTION TheBA1L3Zisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypeNPNtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BB1L3N

COMPOUNDTRANSISTORon-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching

on-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching TheBB1SeriesisanNtypesmallsignaltransistorandenablesthereductionofcomponentcountsanddownsizingofsetsduetoon-chipresistors.Thistransistorisespeciallyidealforuseinhouseholdelectronicapplianc

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BN1L3M

COMPOUNDTRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=4.7kΩ,R2=4.7kΩ) ?ComplementarytransistorwithBA1L3M

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BN1L3M

COMPOUNDTRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=4.7k?,R2=4.7k?) ?ComplementarytransistorwithBA1L3M

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BN1L3N

COMPOUNDTRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) ?ComplementarytransistorwithBA1L3N

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BN1L3N

COMPOUNDTRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=4.7k?,R2=10k?) ?ComplementarytransistorwithBA1L3N

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BN1L3Z

PNPSILICONTRANSISTOR

DESCRIPTION TheBN1L3Zisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BP1L3N

On-chipresistorPNPsiliconepitaxialtransistorFormid-speedswitching

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching TheBP1SeriesisanNtypesmallsignaltransistorandenablesthereductionofcomponentcountsanddownsizingofsetsduetoon-chipresistors.Thistransistorisespeciallyidealforuseinhouseholdelectronicapplian

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

FA1L3M

SILICONTRANSISTOR

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

FA1L3M

MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTORMINIMOLD

MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTORMINIMOLD FEATURES ?ResistorsBuilt-inTYPE ?ComplementarytoFN1L3M

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

FA1L3N

MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTORMINIMOLD

FEATURES ?ResistorsBuilt-inTYPE ?ComplementarytoFN1L3N

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

FA1L3N

SILICONTRANSISTOR

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

FA1L3Z

SILICONTRANSISTOR

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

FA1L3Z

MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTORMINIMOLD

SILICONTRANSISTOR FEATURES ?ResistorBuilt-inTYPE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

FB1L3N

COMPOUNDTRANSISTOR

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?Upto0.7Acurrentdriveavailable ?On-chipbiasresistor ?Lowpowerconsumptionduringdrive

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

晶體管資料

  • 型號:

    AR1L3N

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-P+R

  • 性質:

    開關管 (S)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

  • 最大耗散功率:

    0.75W

  • 放大倍數(shù):

  • 圖片代號:

    A-20

  • vtest:

    60

  • htest:

    999900

  • atest:

    1

  • wtest:

    0.75

詳細參數(shù)

  • 型號:

    AR1L3N

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    on-chip resistor PNP silicon epitaxial transistor

供應商型號品牌批號封裝庫存備注價格
24+
N/A
52000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
VISHAY
1809+
DO-220
6675
就找我吧!--邀您體驗愉快問購元件!
詢價
Vishay General Semiconductor -
24+
DO-220AA(SMP)
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
Vishay
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
VISHAY/威世
21+
原廠封裝
1975
詢價
VISHAY
23+
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
VISHAY
76
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
VISHAY/威世
24+
NA
860000
明嘉萊只做原裝正品現(xiàn)貨
詢價
VISHAY/威世
24+
PLCC
98000
全新原廠原裝正品現(xiàn)貨,可提供技術支持、樣品免費!
詢價
VISHAY
23+
原裝正品現(xiàn)貨
10000
詢價
更多AR1L3N供應商 更新時間2025-1-10 11:06:00