首頁(yè)>AS8F1M32QT-120SLASHXT>規(guī)格書(shū)詳情
AS8F1M32QT-120SLASHXT中文資料AUSTIN數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
AS8F1M32QT-120SLASHXT |
| 功能描述 | 1M x 32 FLASH FLASH MEMORY MODULE |
| 文件大小 |
280.87 Kbytes |
| 頁(yè)面數(shù)量 |
10 頁(yè) |
| 生產(chǎn)廠商 | Austin Semiconductor |
| 企業(yè)簡(jiǎn)稱(chēng) |
AUSTIN |
| 中文名稱(chēng) | Austin Semiconductor官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-6-13 16:30:00 |
| 人工找貨 | AS8F1M32QT-120SLASHXT價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
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AS8F1M32QT-120SLASHXT規(guī)格書(shū)詳情
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS8F1M32 is a 32 Mbit, 5.0 voltonly Flash memory. This device is designed to be programmed insystem with the standard system 5.0 volt VCC supply. The AS8F1M32 offers an access time of 90ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention, the device has separate chip enable (CE), write enable (WE) and output enable (OE) controls.
FEATURES
? Fast access times of 90ns, 120ns, and 150ns
? 5.0V ±10%, single power supply operation
? Low power consumption typical: 4μA typical CMOS stand-by
* ICC(active) <120mA for READ/WRITE
? 20 year DATA RETENTION at 125oC
? 1,000,000 program/erase cycles
? 16 equal sectors of 64 Kbytes each
? Any combination of sectors can be erased
? Group sector protection
? Supports FULL chip erase
? Compatible with JEDEC standards
? Embedded erase and program algorithms
? Data polling and toggle bits for detection of program or erase cycle completion.
? Erase suspend/resume
? Hardware reset pin (RESET)
? Built in decoupling caps and multiple ground pins for low noise operation
? Separate power and ground planes to improve noise immunity
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