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AUIRF9952Q

Advanced Planar Technology Low On-Resistance

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRF

International Rectifier

AUIRF9952Q

AUTOMOTIVE GRADE

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRF9952QTR

Advanced Planar Technology Low On-Resistance

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRF

International Rectifier

AUIRF9952QTR

AUTOMOTIVE GRADE

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CEM9952A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■30V,3.7A,RDS(ON)=80m?@VGS=10V. RDS(ON)=110m?@VGS=4.5V. ■-30V,-2.9A,RDS(ON)=100m?@VGS=-10V. RDS(ON)=150m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM9952AJPT

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT3.7Ampere P-channel:VOLTAGE30VoltsCURRENT2.9Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomo

CHENMKOchenmko

力勤股份有限公司

IRF9952

PowerMOSFET(Vdss=-30V)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9952PBF

ULTRALOWONRESISTANCE

IRF

International Rectifier

IRF9952PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9952QPBF

HEXFETPowerMOSFET

Description TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952QPBF

AdvancedProcessTechnology

Description TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952QTRPBF

AdvancedProcessTechnology

Description TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952TRPBF

GenerationVTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

KDS9952A

DualN&P-ChannelEnhancementModeFieldEffectTransistor

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

KRF9952

HEXFETPowerMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

L9952GXP

PowermanagementsystemIC

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

L9952GXP

PowermanagementsystemIC

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

L9952GXP

forcarbodyapplications

Description TheL5958includes6linearvoltageregulatorsanda2Apowerswitch,workingdownto4.5Vbatterylevel.Allthevoltageregulatorscanbeswitchedoffthroughthethreeenablepins. Features ■L5958sixoutputs: –8.5V@200mA –5.0V@300mA –3.3V@250mA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

L9952GXPTR

PowermanagementsystemIC

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

L9952XP

PowermanagementsystemIC

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    AUIRF9952Q

  • 功能描述:

    MOSFET AUTO 30V 1 N-CH HEXFET 100mOhms

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
2020+
SO-8
8000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
IR
21+
SO-8
6000
原裝正品
詢價(jià)
IR
2021+
SO-8
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
詢價(jià)
Infineon Technologies
23+
TO-263
13000
15年原裝正品企業(yè)
詢價(jià)
IR
23+
SO-8
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
詢價(jià)
INFINE0N
21+
SO8
32568
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
詢價(jià)
IR
24+
SO-8
65300
一級(jí)代理/放心購(gòu)買!
詢價(jià)
IR
22+
SO-8
20000
深圳原裝現(xiàn)貨正品有單價(jià)格可談
詢價(jià)
IR
21+
SO-8
8820
原裝現(xiàn)貨假一賠十
詢價(jià)
INFINEON
1503+
SOP-8
3000
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更多AUIRF9952Q供應(yīng)商 更新時(shí)間2025-1-11 22:30:00