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首頁(yè) >AUIRFR4105Z>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
AUIRFR4105Z	文件：323.57 Kbytes Page：14 Pages	HEXFET? Power MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
AUIRFR4105Z	文件：4.67522 Mbytes Page：12 Pages	AUTOMOTIVE GRADE Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
AUIRFR4105Z	文件：726.28 Kbytes Page：12 Pages	AUTOMOTIVE GRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
AUIRFR4105ZTR	文件：323.57 Kbytes Page：14 Pages	HEXFET? Power MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
AUIRFR4105ZTRL	文件：323.57 Kbytes Page：14 Pages	HEXFET? Power MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
AUIRFR4105ZTRL	文件：726.28 Kbytes Page：12 Pages	AUTOMOTIVE GRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
AUIRFR4105ZTRR	文件：323.57 Kbytes Page：14 Pages	HEXFET? Power MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
AUIRFU4105Z	文件：323.57 Kbytes Page：14 Pages	HEXFET?PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
AUIRFU4105Z	文件：4.67522 Mbytes Page：12 Pages	AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
AUIRFU4105Z	文件：726.28 Kbytes Page：12 Pages	AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
C4105A	文件：73.96 Kbytes Page：1 Pages	7C227/30TCPVCPVCCOMMUNICATIONCABLE	GENERALGeneral Cable Technologies Corporation 通用電氣公司美國(guó)通用電氣公司	GENERAL
CD4105	文件：113.86 Kbytes Page：2 Pages	ZENERDIODECHIPS ?1N4099THRU1N4135AVAILABLEINJANHCANDJANKCPERMIL-PRF-19500/435 ?ZENERDIODECHIPS ?ALLJUNCTIONSCOMPLETELYPROTECTEDWITHSILICONDIOXIDE ?0.5WATTCAPABILITYWITHPROPERHEATSINKING ?ELECTRICALLYEQUIVALENTTO1N4099THRU1N4135 ?COMPATIBLEWITHALLWIREBONDINGANDDIEATTAC	CDI-DIODE Compensated Deuices Incorporated	CDI-DIODE
CDLL4105	文件：96.51 Kbytes Page：2 Pages	LEADLESSPACKAGEFORSURFACEMOUNT ?1N4099UR-1THRU1N4135UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/435 ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWCURRENTOPERATIONAT250μA ?METALLURGICALLYBONDED ?DOUBLEPLUGCONSTRUCTION	CDI-DIODE Compensated Deuices Incorporated	CDI-DIODE
CHA4105-QDG	文件：537.07 Kbytes Page：12 Pages	2-4GHzDriver	UMS United Monolithic Semiconductors	UMS
CLL4105	文件：109.37 Kbytes Page：2 Pages	LOWNOISEZENERDIODE6.8VOLTSTHRU47VOLTS500mW,5TOLERANCE DESCRIPTION: TheCENTRALSEMICONDUCTORCLL4099SeriestypesarehighqualitySiliconZenerDiodesdesignedforlowleakage,lowcurrentandlownoiseapplications.	CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體	Central
CLL4105	文件：307.74 Kbytes Page：2 Pages	SURFACEMOUNTLOWNOISESILICONZENERDIODES6.8VOLTSTHRU47VOLTS500mW,5TOLERANCE	CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體	Central
CMHZ4105	文件：375.77 Kbytes Page：2 Pages	SURFACEMOUNTLOWNOISESILICONZENERDIODE6.8VOLTSTHRU47VOLTS500mW	CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體	Central
CMHZ4105	文件：56.93 Kbytes Page：2 Pages	LOWNOISEZENERDIODE6.8VOLTSTHRU47VOLTS500mW,5TOLERANCE DESCRIPTION: TheCENTRALSEMICONDUCTORCMHZ4099SeriestypesarehighqualitySiliconZenerDiodesdesignedforlowleakage,lowcurrentandlownoiseapplications.	CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體	Central
CMHZ4105	文件：375.77 Kbytes Page：2 Pages	SURFACEMOUNTLOWNOISESILICONZENERDIODE	CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體	Central
CMPZ4105	文件：186.04 Kbytes Page：2 Pages	LOWNOISEZENERDIODE6.8VOLTSTHRU43VOLTS350mW,5TOLERANCE DESCRIPTION: TheCENTRALSEMICONDUCTORCMPZ4099Seriestypesarehighqualitysiliconzenerdiodesdesignedforlowleakage,lowcurrentandlownoiseapplications. NOTE:Forlowervoltagedevices,seeCMPZ4614Series.	CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體	Central

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詳細(xì)參數(shù)

型號(hào)：
AUIRFR4105Z
功能描述：
MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市毅創(chuàng)輝電子科技有限公司	AUIRFR4105Z	Infineon Technologies	23+	SOT-252	13000	15年原裝正品企業(yè)	詢價(jià)
深圳市高捷芯城科技有限公司	AUIRFR4105Z	Infineon(英飛凌)	23+	TO-252	7845	支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。	詢價(jià)
深圳市中福國(guó)際管理有限公司	AUIRFR4105Z	INFINEON/英飛凌	23+	TO-252	360000	專業(yè)供應(yīng)MOS/LDO/晶體管/有大量?jī)r(jià)格低	詢價(jià)
深圳市達(dá)恩科技有限公司	AUIRFR4105Z	Infineon	18+	NA	3000	進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)	詢價(jià)
深圳市華來(lái)深電子有限公司	AUIRFR4105Z	IR	23+	TO-252	11846	一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價(jià)
深圳市振宏微科技有限公司	AUIRFR4105Z	ir	23+	NA	1511	專做原裝正品,假一罰百!	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	AUIRFR4105Z	IR	1822+	TO-252	9852	只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	AUIRFR4105Z	IR	20+	TO-252	36900	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票	詢價(jià)
AUIRFR4105Z	英飛凌	21+	DPAK	6000	絕對(duì)原裝現(xiàn)貨	詢價(jià)
深圳市斌騰達(dá)科技有限公司	AUIRFR4105Z	INFINE0N	21+	DPAK	32568	100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)	詢價(jià)

更多AUIRFR4105Z供應(yīng)商更新時(shí)間2025-1-10 10:01:00

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