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AUIRLR120N規(guī)格書詳情
AUTOMOTIVE GRADE
Description
Specifically designed for Automotive applications, this cellular design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
? Advanced Planar Technology
? Logic-Level Gate Drive
? Low On-Resistance
? Dynamic dV/dT Rating
? 175oC Operating Temperature
? Fast Switching
? Fully Avalanche Rated
? Repetitive Avalanche Allowed up to Tjmax
? Lead-Free, RoHS Compliant
? Automotive Qualified*
產(chǎn)品屬性
- 型號(hào)：
AUIRLR120N
- 功能描述：
MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
TO-252 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
英飛凌 |
21+ |
DPAK |
6000 |
絕對(duì)原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
20+ |
TO-252 |
36900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
Infineon/英飛凌 |
21+ |
DPAK |
10000 |
原裝,品質(zhì)保證,請(qǐng)來(lái)電咨詢 |
詢價(jià) | ||
Infineon |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
IR |
23+ |
TO-252 |
22500 |
公司只做原裝正品 |
詢價(jià) | ||
Infineon Technologies |
30000 |
原裝現(xiàn)貨,支持實(shí)單 |
詢價(jià) | ||||
Infineon(英飛凌) |
23+ |
標(biāo)準(zhǔn)封裝 |
7000 |
原廠原裝現(xiàn)貨訂貨價(jià)格優(yōu)勢(shì)終端BOM表可配單提供樣品 |
詢價(jià) | ||
Infineon(英飛凌) |
21+ |
TO252 |
49 |
原裝現(xiàn)貨,假一罰十 |
詢價(jià) | ||
INFINEON TECHNOLOGIES AG |
2118+ |
原廠封裝 |
6800 |
公司現(xiàn)貨全新原裝假一罰十特價(jià) |
詢價(jià) |
