AWT6133M7P8中文資料ANADIGICS數(shù)據(jù)手冊PDF規(guī)格書

PRODUCT DESCRIPTION

The AWT6133 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm? 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.5 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 ? system.

FEATURES

? InGaP HBT Technology

? High Efficiency: 38

? Low Quiescent Current: 50 mA

? Low Leakage Current in Shutdown Mode: <1 μA

? VREF = +2.85 V (+2.7 V min over temp)

? Optimized for a 50 ? System

? Low Profile Miniature Surface Mount Package: 1.56 mm Max

? CDMA 1XRTT Compliant

? CDMA 1xEV-DO Compliant

APPLICATIONS

? PCS CDMA Wireless Handsets

? Dual Band CDMA Wireless Handsets