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PMEG2010ER-Q

Marking:B5;Package:CFP3;1 A low VF MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotection,encapsulatedinaSOD123WsmallandflatleadSurface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits ?Averageforward

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PTVS24VP1UP

Marking:B5;Package:SOD128;600 W Transient Voltage Suppressor

1.1Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatlead Surface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltage protection. 1.2Featuresandbenefits 1.3Applications Powersupplyprotection Automotiveapplic

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PTVS24VP1UP-Q

Marking:B5;Package:SOD128;600 W Transient Voltage Suppressor

1.Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatleadSurface- MountedDevice(SMD)plasticpackage,designedfortransientovervoltageprotection. 2.Featuresandbenefits ?Ratedpeakpulsepower:PPPM=600W ?Reversestandoffvolta

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PUMB13

Marking:B5;Package:SC-88;PNP/PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 47 k?

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PUMB13-Q

Marking:B5;Package:TSSOP6;PNP/PNP resistor-equipped double transistors; R1 = 4.7 kΩ, R2 = 47 kΩ

1.Generaldescription PNP/PNPdoubleResistor-EquippedTransistors(RET)inaverysmallSOT363(SC-88)Surface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcou

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PUMB3

Marking:B5;Package:SOT363;PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Lowcurrentperipheraldrivers ?Replacementofgeneralpurposetransistorsindigital applications ?ControlofICinputs. DESCRIPTION PNP/PN

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

TLV75519PDQNR

Marking:B5;Package:X2SON;TLV755P 500mA, Low-IQ, Small-Size, Low-Dropout Regulator

1Features ?SOT-23-5packagewith60.3°C/WRθJAavailable ?Inputvoltagerange:1.45Vto5.5V ?LowIQ:25μA(typical) ?Lowdropout: –238mV(maximum)at500mA(3.3VOUT) ?Outputaccuracy:1%(maximumat85°C) ?Built-insoft-startwithmonotonicVOUTrise ?Foldbackcurrentlimit

TI1Texas Instruments

德州儀器美國德州儀器公司

TLV75519PDQNR

Marking:B5;Package:X2SON;TLV755P 500-mA, Low IQ, Small Size, Low Dropout Regulator

1Features ?Inputvoltagerange:1.45Vto5.5V ?LowIQ:25μA(typical) ?Lowdropout: –238mV(maximum)at500mA(3.3VOUT) ?Outputaccuracy:1(maximumat85°C) ?Built-insoft-startwithmonotonicVOUTrise ?Foldbackcurrentlimit ?Activeoutputdischarge ?HighPSRR:46dBat

TI1Texas Instruments

德州儀器美國德州儀器公司

TLV75519PDQNR

Marking:B5;Package:X2SON;TLV755P 500-mA, Low IQ, Small Size, Low Dropout Regulator

1Features 1?InputVoltageRange:1.45Vto5.5V ?LowIQ:25μA(Typical) ?LowDropout: –238mV(Maximum)at500mA(3.3VOUT) ?OutputAccuracy:1(Maximumat85°C) ?Built-InSoft-StartWithMonotonicVOUTRise ?FoldbackCurrentLimit ?ActiveOutputDischarge ?HighPSRR:46dBa

TITexas Instruments

德州儀器美國德州儀器公司

TLV75519PDQNR

Marking:B5;Package:X2SON;TLV755P 500mA, Low-IQ, Small-Size, Low-Dropout Regulator

1Features ?SOT-23-5packagewith60.3°C/WRθJAavailable ?Inputvoltagerange:1.45Vto5.5V ?LowIQ:25μA(typical) ?Lowdropout: –238mV(maximum)at500mA(3.3VOUT) ?Outputaccuracy:1(maximumat85°C) ?Built-insoft-startwithmonotonicVOUTrise ?Foldbackcurrentlimit ?Act

TI1Texas Instruments

德州儀器美國德州儀器公司

詳細(xì)參數(shù)

  • 型號(hào):

    B5

  • 制造商:

    Burndy

  • 功能描述:

    BW BCR1 4/0 TO 1/2

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HP
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群鑫
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22+
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24+
N/A
72000
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更多B5供應(yīng)商 更新時(shí)間2025-7-24 9:50:00