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BAS101

High-voltage switching diodes

Generaldescription High-voltageswitchingdiodes,encapsulatedinaSOT23smallSurface-MountedDevice(SMD)plasticpackage. Features ■Highswitchingspeed:trr≤50ns ■Lowcapacitance:Cd≤2pF ■Lowleakagecurrent ■Reversevoltage:VR≤300V ■Repetitivepeakreversevoltage:

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

BAS101

絲印：HQ；Package：SOT23；High-voltage switching diodes

1.1Generaldescription High-voltageswitchingdiodes,encapsulatedinaSOT23smallSurface-Mounted Device(SMD)plasticpackage. 1.2Features 1.3Applications Table1.Productoverview TypenumberPackageConfiguration NexperiaJEITA BAS101SOT23-single BAS101SSOT23-dualseries H

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BAS101

High-voltage switching diodes; ? High switching speed: trr ≤ 50 ns\n? Low leakage current\n? Repetitive peak reverse voltage: VRRM ≤ 300\n? Low capacitance: Cd ≤ 2 pF\n? Reverse voltage: VR ≤ 300 V\n? Small SMD plastic package\n? AEC-Q101 qualified\n;

High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.\n

NexperiaNexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BAS101

小信號開關(guān)二極管;

YJYJYCOIN ELECTRONICS CO.,LTD.

益嘉源深圳市益嘉源電子有限公司

BAS101S

High-voltage switching diodes; ? High switching speed: trr ≤ 50 ns\n? Low leakage current\n? Repetitive peak reverse voltage: VRRM ≤ 300\n? Low capacitance: Cd ≤ 2 pF\n? Reverse voltage: VR ≤ 300 V\n? Small SMD plastic package\n? AEC-Q101 qualified\n;

High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.\n

NexperiaNexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BAS101S

High-voltage switching diodes

Generaldescription High-voltageswitchingdiodes,encapsulatedinaSOT23smallSurface-MountedDevice(SMD)plasticpackage. Features ■Highswitchingspeed:trr≤50ns ■Lowcapacitance:Cd≤2pF ■Lowleakagecurrent ■Reversevoltage:VR≤300V ■Repetitivepeakreversevoltage:

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

BAS101S

絲?。?a target="_blank" title="Marking" href="/hr/marking.html">HR；Package：SOT23；High-voltage switching diodes

1.1Generaldescription High-voltageswitchingdiodes,encapsulatedinaSOT23smallSurface-Mounted Device(SMD)plasticpackage. 1.2Features 1.3Applications Table1.Productoverview TypenumberPackageConfiguration NexperiaJEITA BAS101SOT23-single BAS101SSOT23-dualseries H

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BAS101_09

High-voltage switching diodes

ETC

ETC

BAS101_BAS101S_15

High-voltage switching diodes

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

BAS101S

High-voltage switching diodes

ETC

ETC

技術(shù)參數(shù)

  • IF(mA)：

    200

  • VBR(V)：

    250

  • VF(V)：

    1.1

  • @IF(mA)：

    100

  • IRM(μA)：

    0.15

  • @VR(V)：

    250

  • Trr(ns)：

    50

  • Status：

    Active

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24+
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11+
SOT23
150
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NEXPERIA/安世
20+
SOT-23
120000
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SOT-23
10000
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2447
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100500
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NA
20094
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SOT23
1003
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恩XP
21+
6000
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NEXPERIA/安世
21+
SOT23
19600
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SOT23
690
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