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BUF636A

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=450V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):0.2V(Max)@IC=0.8A APPLICATIONS ·Electroniclampballastcircuits ·Switch-modepowersupplies

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

C636

500WATTS(AC)DC/DCSINGLEOUTPUT

Features ?SingleOutput ?3Ux42TEx166.5mm ?Weight:3.5kg

POWERBOX

Powerbox manufactures

CPL636

SILICONPLANAREPITAXIALTRANSISTORS

CDIL

Continental Device India Limited

CT636CYF

PowerInductors-Shielded

CT

Central Technologies

CT636FYF

PowerInductors-Unshielded

CT

Central Technologies

CTN636

ComplementaryTransistorsinPlasticPackageforDriverStageofAudioAmplifier

CTN635,637,639NPNSILICONPLANAREPITAXIALTRANSISTORS CTN636,638,640PNPSILICONPLANAREPITAXIALTRANSISTORS

CDIL

Continental Device India Limited

CWST636

DATASUBJECTTOCHANGEWITHOUTNOTLCE

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

D636

NPNTransistor

PanasonicPanasonic Semiconductor

松下松下電器

DG636

0.5pCChargeInjection,100pALeakage,DualSPDTAnalogSwitch

VishayVishay Siliconix

威世科技威世科技半導體

DG636

0.5pCChargeInjection,100pALeakage,DualSPDTAnalogSwitch

VishayVishay Siliconix

威世科技威世科技半導體

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