| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
BD908 | Silicon PNP Power Transistor DESCRIPTION ?DCCurrentGain-:hFE=40@IC=-0.5A ?Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min) ?ComplementtoTypeBD907 APPLICATIONS ?Designedforuseingeneralpurposepoweramplifierandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
BD908 | POWER TRANSISTORS(15A,90W)
| MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | |
BD908 | COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
| bocaBoca Semiconductor Corporation 博卡博卡半導(dǎo)體公司 | boca | |
BD908 | isc Silicon PNP Power Transistor DESCRIPTION ?DCCurrentGain-:hFE=40@IC=-0.5A ?Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min) ?ComplementtoTypeBD907 APPLICATIONS ?Designedforuseingeneralpurposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
BD908 | PLASTIC POWER TRANSISTORS PowerLinearandSwitchingApplications | CDIL Continental Device India Limited | CDIL | |
BD908 | SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | |
PLASTIC POWER TRANSISTORS PowerLinearandSwitchingApplications | CDIL Continental Device India Limited | CDIL | ||
Dual-gateMOS-FETs DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES ?Highforwardtransferadmittance ?Shortch | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
Dual-gateMOS-FETs DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES ?Highforwardtransferadmittance ?Shortch | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
Dual-gateMOS-FETs DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES ?Highforwardtransferadmittance ?Shortch | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
Dual-gateMOS-FETs DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES ?Highforwardtransferadmittance ?Shortch | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channeldual-gateMOS-FET DESCRIPTION DepletiontypefieldeffecttransistorinaplasticmicrominiatureSOT343Rpackage.Thetransistoris protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES ?Highforwardtransferadmittance ?Shortchanne | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
BU908 | MICRO-ELECTRONICS Micro Electronics | MICRO-ELECTRONICS | ||
iscSiliconNPNPowerTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
TO-3PFullyIsolatedPlasticPackageTransistorCDIL TO-3PFullyIsolatedPlasticPackageTransistorCDIL | CDIL Continental Device India Limited | CDIL |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-PNP
- 性質(zhì)：
低頻或音頻放大 （LF）_功率放大 （L）
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
15A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號(hào)：
BD546A,BD744A,3CD10C,
- 最大耗散功率：
90W
- 放大倍數(shù)：
- 圖片代號(hào)：
B-10
- vtest：
60
- htest：
999900
- atest：
15
- wtest：
90
詳細(xì)參數(shù)
- 型號(hào)：
BD908
- 制造商：
ISC
- 制造商全稱：
Inchange Semiconductor Company Limited
- 功能描述：
isc Silicon PNP Power Transistor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-220 |
10000 |
全新 |
詢價(jià) | |||
ST |
17+ |
TO-220 |
6200 |
詢價(jià) | |||
ST |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
BOCA |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
ON |
2020+ |
TO-220 |
6500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
ST |
21+ |
TO-220 |
12588 |
原裝正品,自己庫(kù)存 假一罰十 |
詢價(jià) | ||
ST |
2020+ |
TO-220 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
ST |
2022+ |
24 |
全新原裝 貨期兩周 |
詢價(jià) | |||
ST |
2021+ |
TO-220 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
ST |
21+ |
TO-220 |
130 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) |
