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BDX88

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·HighDCCurrentGain- :hFE=750(Min)@IC=-6A ·Collector-EmitterSustainingVoltage- :VCEO(SUS)=-45V(Min)-BDX88;-60V(Min)-BDX88A -80V(Min)-BDX88B;-100V(Min)-BDX88C ·ComplementtoTypeBDX87/A/B/C APPLICATIONS ·Designed

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BDX88

Power Transistors

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6674,2N6675typesareNPNSiliconTripleDiffusedMesaPowerTransistorsdesignedforhighvoltageswitchingapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

BDX88

Bipolar PNP Device in a Hermetically sealed TO3 Metal Package

SEME-LAB

Seme LAB

BDX88

Silicon PNP Darlington Power Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BDX88A

Power Transistors

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6674,2N6675typesareNPNSiliconTripleDiffusedMesaPowerTransistorsdesignedforhighvoltageswitchingapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

BDX88A

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·HighDCCurrentGain- :hFE=750(Min)@IC=-6A ·Collector-EmitterSustainingVoltage- :VCEO(SUS)=-45V(Min)-BDX88;-60V(Min)-BDX88A -80V(Min)-BDX88B;-100V(Min)-BDX88C ·ComplementtoTypeBDX87/A/B/C APPLICATIONS ·Designed

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BDX88B

Power Transistors

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6674,2N6675typesareNPNSiliconTripleDiffusedMesaPowerTransistorsdesignedforhighvoltageswitchingapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

BDX88B

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·HighDCCurrentGain- :hFE=750(Min)@IC=-6A ·Collector-EmitterSustainingVoltage- :VCEO(SUS)=-45V(Min)-BDX88;-60V(Min)-BDX88A -80V(Min)-BDX88B;-100V(Min)-BDX88C ·ComplementtoTypeBDX87/A/B/C APPLICATIONS ·Designed

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BDX88C

Power Transistors

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6674,2N6675typesareNPNSiliconTripleDiffusedMesaPowerTransistorsdesignedforhighvoltageswitchingapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

BDX88C

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION TheBDX87Cisasiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-3metalcase.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesistheBDX88C. ■SGS-THOMSONPREFER

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

晶體管資料

  • 型號(hào):

    BDX88

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-P+Darl+Di

  • 性質(zhì):

    低頻或音頻放大 (LF)_開(kāi)關(guān)管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    100V

  • 最大電流允許值:

    12A

  • 最大工作頻率:

    35MHZ

  • 引腳數(shù):

    2

  • 可代換的型號(hào):

    BDX66,MJ4030,TIP645,2N6050,

  • 最大耗散功率:

    120W

  • 放大倍數(shù):

    β>1000

  • 圖片代號(hào):

    E-44

  • vtest:

    100

  • htest:

    35000000

  • atest:

    12

  • wtest:

    120

詳細(xì)參數(shù)

  • 型號(hào):

    BDX88

  • 制造商:

    ISC

  • 制造商全稱(chēng):

    Inchange Semiconductor Company Limited

  • 功能描述:

    isc Silicon PNP Darlington Power Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
TO-3
10000
全新
詢(xún)價(jià)
ST
1738+
TO-3
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
詢(xún)價(jià)
ISC
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢(xún)價(jià)
ST
22+
TO-3
66900
原廠原裝現(xiàn)貨
詢(xún)價(jià)
ST
23+
TO-3
16900
正規(guī)渠道,只有原裝!
詢(xún)價(jià)
SGS
23+
20000
正品原裝貨價(jià)格低
詢(xún)價(jià)
ST
24+
TO-3
200000
原裝進(jìn)口正口,支持樣品
詢(xún)價(jià)
ST
21+
TO-3
23480
詢(xún)價(jià)
ST
專(zhuān)業(yè)鐵帽
TO-3
500
原裝鐵帽專(zhuān)營(yíng),代理渠道量大可訂貨
詢(xún)價(jià)
ST
專(zhuān)業(yè)鐵帽
TO-3
67500
鐵帽原裝主營(yíng)-可開(kāi)原型號(hào)增稅票
詢(xún)價(jià)
更多BDX88供應(yīng)商 更新時(shí)間2025-3-20 16:00:00