零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
BF181 | NPN TRANZYSTORY [ADVANIOERLIKON] TELEVISION/VIDEODEVICES I.F./R.F.amplifiersandoscillators V.H,F./U.H.F.TVtuningdevices | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | |
BF181 | General Purpose Diodes GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
BF181 | Electrical characterlitics GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
BF181 | TRANZYSTORY [ADVANIOERLIKON] TELEVISION/VIDEODEVICES I.F./R.F.amplifiersandoscillators V.H,F./U.H.F.TVtuningdevices | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | |
NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA) NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA ?fT=8GHz,NFmin=0.9dBat900MHz ?Pb-free(RoHScompliant)package ?QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA) NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SiliconNPNPlanarRFTransistor Features ?Lownoisefigure ?Highpowergain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/EC ??andWEEE2002/96/EC Applications ??Forlownoiseandhighgainbroadbandamplifiersat ??collectorcurrentsfrom0.5mAto12mA. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor Features ?Lownoisefigure ?Highpowergain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/EC ??andWEEE2002/96/EC Applications ??Forlownoiseandhighgainbroadbandamplifiersat ??collectorcurrentsfrom0.5mAto12mA. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SiliconNPNPlanarRFTransistor Features ?Lownoisefigure ?Highpowergain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/EC ??andWEEE2002/96/EC Applications ??Forlownoiseandhighgainbroadbandamplifiersat ??collectorcurrentsfrom0.5mAto12mA. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA) NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA) NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz,NFmin=0.9dBat900MHz ?Pb-free(RoHScompliant)package ?QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor Preliminarydata ?Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質(zhì):
甚高頻 (VHF)_超高頻/特高頻 (UHF)_混頻 (M)
- 封裝形式:
直插封裝
- 極限工作電壓:
- 最大電流允許值:
- 最大工作頻率:
600MHZ
- 引腳數(shù):
4
- 可代換的型號(hào):
BF357,BF377,BF378,BF689,BF763,2N918,2N2857,2SC1158,3DG112D,
- 最大耗散功率:
- 放大倍數(shù):
- 圖片代號(hào):
D-13
- vtest:
0
- htest:
600000000
- atest:
0
- wtest:
0
詳細(xì)參數(shù)
- 型號(hào):
BF181
- 制造商:
NJSEMI
- 制造商全稱:
New Jersey Semi-Conductor Products, Inc.
- 功能描述:
Electrical characterlitics
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
MOT/PHI |
24+ |
CAN4 |
8500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
PHILIPS |
23+ |
CAN |
1625 |
優(yōu)勢(shì)庫(kù)存 |
詢價(jià) | ||
2339+ |
SOP3-18 |
21322 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢價(jià) | |||
PHILIPS |
專業(yè)鐵帽 |
CAN4 |
11000 |
原裝鐵帽專營(yíng),代理渠道量大可訂貨 |
詢價(jià) | ||
N/L |
23+ |
512 |
詢價(jià) | ||||
PHILIPS/飛利浦 |
專業(yè)鐵帽 |
CAN4 |
67500 |
鐵帽原裝主營(yíng)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
MOT |
24+ |
CAN |
6430 |
原裝現(xiàn)貨/歡迎來(lái)電咨詢 |
詢價(jià) | ||
PHILIPS |
23+ |
CAN4 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
PHILIPS |
8638+ |
CAN4 |
1000 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
PHILIPS |
2211+ |
CAN4 |
4207 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) |