首頁 >BFY420(ES)/ESA>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Si-MMIC-AmplifierinSIEGET25-Technologie(Cascadable50廓-gainblockUnconditionallystable) Si-MMIC-AmplifierinSIEGET?25-Technologie Preliminarydata ?Cascadable50?-gainblock ?Unconditionallystable ?Gain|S21|2=13dBat1.8GHzIP3out=+9dBmat1.8GHz(VD=3V,ID=typ.6.4mA) ?NoisefigureNF=2.2dBat1.8GHz ?Reverseisolation>28dBandreturnlossIN/O | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
Si-MMIC-AmplifierinSIEGET25-Technologie Si-MMIC-AmplifierinSIEGET?25-Technologie ?Cascadable50?-gainblock ?Unconditionallystable ?Gain|S21|2=13dBat1.8GHzIP3out=+13dBmat1.8GHz(VD=3V,ID=typ.6.7mA) ?NoisefigureNF=2.2dBat1.8GHz ?Reverseisolation>28dBandreturnlossIN/OUT>12dBat1.8 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Si-MMIC-AmplifierinSIEGET25-Technologie | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ActiveBiasedTransistor Description SIEGET?-25NPNTransistorwithintegratedbiasingforhighgainlownoisefigureapplications.ICcanbecontrolledusingIBiasaccordingtoIC=10*IBias. Features ?Forhighgainlownoiseamplifiers ?Idealforwidebandapplications,cellulartelephones, cordlesstelephones, | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Self-BiasedBFP420 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistorWithBiasCircuitry Features ?NoisefigureNF=1.5dBat0.4GHz ?GainS21=26dBat0.4GHz ?Onchipbiascircuitry,13mAbiascurrentatVCC=3.6V; VBB=2.8V ?SIEGET?25GHzfT-Line ?Pb-free(RoHScompliant)package *Shorttermdescription Applications ?LNAs | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價 | |||
INFINEON |
23+ |
7000 |
詢價 | ||||
INFINEON |
23+ |
-- |
14253 |
原包裝原標(biāo)現(xiàn)貨,假一罰十, |
詢價 | ||
INFINEON |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
INFINEON |
22+ |
16+ |
8000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
MOT/PHI |
24+ |
CAN |
9500 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
MOT/ST/PH |
2339+ |
CAN3 |
21322 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存! |
詢價 | ||
MOT/PHI |
專業(yè)鐵帽 |
CAN |
9500 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
MOT/PHI |
專業(yè)鐵帽 |
CAN |
67500 |
鐵帽原裝主營-可開原型號增稅票 |
詢價 | ||
PH |
24+ |
CAN |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 |
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