BLF573

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

恩XP

BLF573

HF / VHF power LDMOS transistor

Generaldescription A300WLDMOSRFpowertransistorforbroadcastapplicationsandindustrial,scientific andmedicalapplicationsintheHFto500MHzband. Featuresandbenefits ?TypicalCWperformanceatfrequencyof225MHz,asupplyvoltageof50Vandan IDqof900mA: ?Averageout

BLF573

HF / VHF power LDMOS transistor

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.\n\n; Easy power control\nIntegrated ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (HF and VHF band)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances\n;

BLF573(S)

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

恩XP

BLF573S

HF / VHF power LDMOS transistor

Generaldescription A300WLDMOSRFpowertransistorforbroadcastapplicationsandindustrial,scientificandmedicalapplicationsintheHFto500MHzband. Featuresandbenefits ■TypicalCWperformanceatfrequencyof225MHz,asupplyvoltageof50VandanIDqof900mA: ◆Averageo

恩XP

BLF573S

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

恩XP

BLF573S

HF / VHF power LDMOS transistor

Generaldescription A300WLDMOSRFpowertransistorforbroadcastapplicationsandindustrial,scientific andmedicalapplicationsintheHFto500MHzband. Featuresandbenefits ?TypicalCWperformanceatfrequencyof225MHz,asupplyvoltageof50Vandan IDqof900mA: ?Averageout

BLF573S

HF / VHF power LDMOS transistor

General description\nA 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.; ■ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA:\n?? ? Average output power = 300 W\n?? ? Power gain = 26.5 dB\n?? ? Efficiency = 70 %\n■ Easy power control\n■ Integrated ESD protection\n■ Excellent ruggedness\n■ High efficiency\n■ Excellent therma;

恩XP

BLF573S

HF / VHF power LDMOS transistor

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.\n\n; Easy power control\nIntegrated ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (HF and VHF band)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances\n;

BLF573_BLF573S_15

HF / VHF power LDMOS transistor

PHI