BLF6G20-110分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Features

■ Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA:

◆ Average output power = 25 W

◆ Power gain = 19 dB

◆ Efficiency = 31

◆ IMD3 = ?37 dBc

◆ ACPR = ?40 dBc

■ Easy power control

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (1800 MHz to 2000 MHz)

■ Internally matched for ease of use

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

■ RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 1800 MHz to 2000 MHz frequency range