BLF6G38LS-50分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.

Features and benefits

■ Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,

synchronization and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01

probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of

3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a

power gain of 14 dB, a drain efficiency of 23 and a peak output power of 70 W:

■ Qualified up to a maximum VDS operation of 32 V

■ Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation

■ Internally matched for ease of use

■ Low gold plating thickness on leads

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

■ RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to 3800 MHz frequency range