BLF8G20LS-260A分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

260 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.

Features and benefits

■ Excellent ruggedness

■ High-efficiency

■ Low Rth providing excellent thermal stability

■ Designed for broadband operation (1805 MHz to 1880 MHz)

■ Asymmetric design to achieve optimum efficiency across the band

■ Lower output capacitance for improved performance in Doherty applications

■ Designed for low memory effects providing excellent digital pre-distortion capability

■ Internally matched for ease of use

■ Integrated ESD protection

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

■ RF power amplifiers for W-CDMA base stations and GSM multi carrier applications in

the 1805 MHz to 1880 MHz frequency range