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BP103

NPN-Silizium-FototransistorSiliconNPNPhototransistor

Features ●Especiallysuitableforapplicationsfrom420nmto1130nm ●Highlinearity ●TO-18,baseplate,transparentepoxyresinlens,withbaseconnection Applications ●Computer-controlledflashes ●Photointerrupters ●Industrialelectronics ●Forcontrolanddrive

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BP103

Especiallysuitableforapplicationsfrom420nmto1130nm

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

BP-103

NPN-Silizium-Fototransistor

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

BP103B

.NPN-Silizium-FototransistorSiliconNPNPhototransistor

Features ●Especiallysuitableforapplicationsfrom420nmto1130nm(SFH300)andof880nm(SFH300FA) ●Highlinearity ●5mmLEDplasticpackage ●Availableingroups Applications ●Computer-controlledflashes ●Photointerrupters ●Industrialelectronics ●For

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BP103B

NPN-Silizium-FototransistorNEU:NPN-Silizium-FototransistormitTageslichtsperrfilter

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BP103BF

.NPN-Silizium-FototransistorSiliconNPNPhototransistor

Features ●Especiallysuitableforapplicationsfrom420nmto1130nm(SFH300)andof880nm(SFH300FA) ●Highlinearity ●5mmLEDplasticpackage ●Availableingroups Applications ●Computer-controlledflashes ●Photointerrupters ●Industrialelectronics ●For

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BR103

SiliconBi-directionalTriggerDevice

GENERALDESCRIPTION Siliconbidirectionaltriggerdeviceinaglassenvelopesuitableforsurfacemounting.Thedeviceisintendedforuseintriacandthyristortriggercircuits.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BR103

SILICONMINIATURETHYRISTOR

SiliconMiniatureThyristor

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BR103

SILICONPLANARTHYRISTOR

DIGITRON

Digitron Semiconductors

BR103

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

BR103LLD

SiliconBi-directionalTriggerDevice

GENERALDESCRIPTION Siliconbidirectionaltriggerdeviceinaglassenvelopesuitableforsurfacemounting.Thedeviceisintendedforuseintriacandthyristortriggercircuits.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BSH103

N-channelenhancementmodeMOStransistor

DESCRIPTION N-channelenhancementmodeMOStransistorinaSOT23SMDpackage. FEATURES ?Verylowthreshold ?High-speedswitching ?Nosecondarybreakdown ?DirectinterfacetoC-MOS,TTLetc. APPLICATIONS ?Powermanagement ?DCtoDCconverters ?Batterypoweredapplications ?‘Glue-

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BSH103

N-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

BSH103

N-channelenhancementmodeMOStransistor

FEATURES ·Verylowthreshold ·High-speedswitching ·Nosecondarybreakdown ·DirectinterfacetoC-MOS,TTLetc. APPLICATIONS ·Powermanagement ·DCtoDCconverters ·Batterypoweredapplications ·‘Glue-logic’;interfacebetweenlogicblocksand/or periphery ·Generalpurposeswit

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BSH103BK

30V,N-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Lowthresholdvoltage ?Veryfastswitching ?TrenchMOSFETtechnology ?ElectroStaticDis

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BT103

DC/DCConverters

ETCList of Unclassifed Manufacturers

未分類制造商

BU103

BipolarJunctionTransistor

FEATURES ●Highvoltagecapability ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 ChargerandSwitch-modepowersupplies

JINGDAOShenzhen Jingdao Electronic Co.,Ltd

晶導(dǎo)深圳市晶導(dǎo)電子有限公司

BU103A

iscSiliconNPNPowerTransistor

DESCRIPTION ·ContinuousCollectorCurrent-IC=1A ·CollectorPowerDissipation- :PC=30W@TC=25℃ APPLICATIONS ·DesignedforTVverticalapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BU103A

SiliconPNPPowerTransistor

DESCRIPTION ?ContinuousCollectorCurrent-lc=1A ?CollectorPowerDissipation- :Pc=30W@TC=25°C APPLICATIONS ?DesignedforTVverticalapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BU103A

BipolarJunctionTransistor

FEATURES ●Highvoltagecapability ●Intergratedantiparallelcollector-emitterdiode ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 andSwitch-modepowersupplies

JINGDAOShenzhen Jingdao Electronic Co.,Ltd

晶導(dǎo)深圳市晶導(dǎo)電子有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    BMIS103

  • 制造商：

    BMI

  • 制造商：

    BMI INC

  • 制造商：

    Laird Technologies Inc

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LAIRD
23+
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8000
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2021+
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100500
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3255
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LAIRD TECHNOLOGIES INC
24+
con
10000
查現(xiàn)貨到京北通宇商城
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Laird
24+
NA
142002
專注原裝正品代理分銷,認(rèn)準(zhǔn)水星電子
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LAIRD TECHNOLOGIES INC
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2500
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LAIRD
24+
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1450
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LAIRD
2022+
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10000
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LAIRD
23+
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10000
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更多BMIS103供應(yīng)商 更新時(shí)間2025-1-10 15:36:00

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