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首頁 >BRB50N06>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
BRB50N06	文件：762.78 Kbytes Page：6 Pages	N-CHANNEL MOSFET in a TO-263 Plastic Package	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍箭電子佛山市藍箭電子股份有限公司	FOSHAN
BRD50N06	文件：1.01448 Mbytes Page：4 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司	DOINGTER
CEB50N06	文件：391.29 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,50A,RDS(ON)=17mΩ(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB50N06	文件：636.35 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,50A,RDS(ON)=22mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB50N06G	文件：587.93 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,55A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED50N06	文件：883.06 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,36A,RDS(ON)=18m?(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED50N06	文件：423.6 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,36A,RDS(ON)=18mW(typ)@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED50N06G	文件：508.65 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,40A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP50N06	文件：391.29 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,50A,RDS(ON)=17mΩ(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP50N06	文件：1.4536 Mbytes Page：6 Pages	50A,60VHeatsinkPlanarN-ChannelPowerMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply.Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220M	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導體思祁半導體有限公司	THINKISEMI
CEP50N06	文件：1.14917 Mbytes Page：4 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司	DOINGTER
CEP50N06	文件：636.35 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,50A,RDS(ON)=22mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP50N06G	文件：587.93 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,55A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU50N06	文件：883.06 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,36A,RDS(ON)=18m?(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU50N06	文件：1.01405 Mbytes Page：4 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司	DOINGTER
CEU50N06	文件：991.61 Kbytes Page：7 Pages	N-Channel60V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司	VBSEMI
CEU50N06	文件：423.6 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,36A,RDS(ON)=18mW(typ)@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU50N06G	文件：508.65 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,40A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CHM50N06NPT	文件：239.86 Kbytes Page：2 Pages	N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT50Ampere FEATURE ???????Smallpackage.(D2PAK) SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. APPLICATION Servomotorcontrol. PowerMOSFETgatedrivers. Otherswitchingapplications.	CHENMKOchenmko 力勤股份有限公司	CHENMKO
CHM50N06PAPT	文件：198.76 Kbytes Page：2 Pages	N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT36Ampere FEATURE Smallpackage.(TO-252A) ???????SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. APPLICATION Servomotorcontrol. PowerMOSFETgatedrivers. Otherswitchingapplications.	CHENMKOchenmko 力勤股份有限公司	CHENMKO

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供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市匯萊威科技有限公司	BR-B5134-05V	BRIGHT	24+	LED	68900	一站配齊原盒原包現(xiàn)貨朱S Q2355605126	詢價
上海金慶電子技術有限公司	BRB5W	AltechCorp.	新		55	全新原裝貨期兩周	詢價
上海市鑫鴻達電子	BRB5W	Altech Corp.	2022+		51	全新原裝貨期兩周	詢價
深圳市達英美科技有限公司	BRB-B113-F00clc	JAE	2022	連接器	10000	全新、原裝	詢價
中天科工半導體（深圳）有限公司	BRBG1201W	STANLEY	20+	SMD	83000	LED原裝優(yōu)勢主營型號-可開原型號增稅票	詢價
深圳市維爾達電子有限公司	BRBG1201W	STANLEY	2023+		80000	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價
瀚佳科技(深圳)有限公司	BRBG1201W	STANLEY	24+		35200	一級代理/放心采購	詢價
深圳市創(chuàng)新跡電子有限公司	BRBG1201W	STANLEY	23+	原廠正規(guī)渠道	5000	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市安羅世紀電子有限公司	BRBG1201W	STANLEY	2023+	SMD	5600	安羅世紀電子只做原裝正品貨	詢價
深圳市安富世紀電子有限公司	BRBG1201W	STANLEY	23+	原廠正規(guī)渠道	5000	專注配單,只做原裝進口現(xiàn)貨	詢價

更多BRB50N06供應商更新時間2025-1-12 9:43:00

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