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BSO130N03MSG

OptiMOS?? M-Series Power-MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSZ130N03LSG

OptiMOS??Power-MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSZ130N03MSG

OptiMOS??M-SeriesPower-MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PHB130N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=5V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHB130N03LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB130N03LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB130N03T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintend

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP130N03LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP130N03T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

RLW130N03

N-Channel30V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

詳細參數(shù)

  • 型號：

    BSO130N03MSG

  • 制造商：

    Infineon Technologies AG

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
17+
SO-8
31518
原裝正品 可含稅交易
 詢價
Bychip
23+
SOP8
10000
高品質(zhì)替代,技術(shù)支持,參數(shù)選型
 詢價
Infineon(英飛凌)
23+
SOP-8
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
Infineon
23+
DSO-8
7750
全新原裝優(yōu)勢
 詢價
INF
23+
SOP8
38233
原裝正品,假一罰十
 詢價
INFINEON
24+
SOP-8
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
INFINEON
1742+
SOP-8
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
 詢價
INFINEON
23+
SOP-8
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
INFINEON
23+
NA
1836
專做原裝正品,假一罰百!
 詢價
Infineon
18+
SOP-8
41200
原裝正品,現(xiàn)貨特價
 詢價
更多BSO130N03MSG供應(yīng)商 更新時間2025-1-22 14:00:00

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