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BSP350

MiniPROFET (High-side switch Short-circuit protection Overtemperature protection with hysteresis)

MiniPROFET ?High-sideswitch ?Short-circuitprotection ?Overtemperatureprotectionwithhysteresis ?Overloadprotection ?Overvoltageprotection ?Reversebatteryprotection1) ?Switchinginductiveload ?Clampofnegativeoutputvoltagewithinductiveloads ?Maxi

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BSP350

MiniPROFET(High-side switch Short-circuit protection Overtemperature protection with hysteresis)

MiniPROFET ?High-sideswitch ?Short-circuitprotection ?Overtemperatureprotectionwithhysteresis ?Overloadprotection ?Overvoltageprotection ?Reversebatteryprotection1) ?Switchinginductiveload ?Clampofnegativeoutputvoltagewithinductiveloads ?Maximumcurrentinternal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSP3505D

Baseband Sound Processor

Introduction TheBSP3505Disdesignedasasingle-chipBasebandSoundProcessorforapplicationsinanaloganddigitalTVsets,videorecorders,andsatellitereceivers. TheICisproducedinsubmicronCMOStechnology,andisfullypinandsoftwarecompatibletotheMSP34xxfamily.TheBSP350

MICRONAS

Micronas

BSWM350DH-PCB

Solidstatepressureswitchwithanalogoutput

SENSORTECHNICS

Sensortechnics GmbH

BSWM350DV-PCB

Solidstatepressureswitchwithanalogoutput

SENSORTECHNICS

Sensortechnics GmbH

BUZ350

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rated)

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BUZ350

SIPMOSPowerTransistor

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BUZ350

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

C350

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350

MILITARYSPECIFCATIONSONBACK

KEMETKEMET Corporation

基美基美公司

C350

MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED

KEMETKEMET Corporation

基美基美公司

C350

MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED

MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED Multilayerceramiccapacitorsareavailableinavarietyofphysicalsizesandconfigurations,includingleadeddevicesandsurfacemountedchips.Leadedstylesincludemoldedandconformallycoatedpartswithaxialandradialleads.However

KEMETKEMET Corporation

基美基美公司

C350

MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED

KEMETKEMET Corporation

基美基美公司

C350

AluminumElectrolyticCapacitors

KEMETKEMET Corporation

基美基美公司

C350

MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED

KEMETKEMET Corporation

基美基美公司

C350

MAGNETICSFORRF,POWER,FILTERANDDATAAPPLICATIONS

COILCRAFTCoilcraft lnc.

線藝美國(guó)線藝公司

C350E

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350M

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350N

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350N

PhaseControlSCR115AmperesAverage1600Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

詳細(xì)參數(shù)

  • 型號(hào):

    BSP350

  • 制造商:

    INFINEON

  • 制造商全稱:

    Infineon Technologies AG

  • 功能描述:

    MiniPROFET(High-side switch Short-circuit protection Overtemperature protection with hysteresis)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON/英飛凌
21+
SOT223
23600
十年以上分銷商原裝進(jìn)口件服務(wù)型企業(yè)0755-83790645
詢價(jià)
INFINEON/英飛凌
24+
SOT-223
2000
只做原廠渠道 可追溯貨源
詢價(jià)
INFINEON
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
INFINEON
24+
SOT-223
6410
新進(jìn)庫存/原裝
詢價(jià)
INFINEON
24+
SOP223
2645
100%全新原裝公司現(xiàn)貨供應(yīng)!隨時(shí)可發(fā)貨
詢價(jià)
INFINEON
23+
SOT223
35890
詢價(jià)
ROHM
23+
DIP
5000
原裝正品,假一罰十
詢價(jià)
BSP
23+
3TO252
2560
優(yōu)勢(shì)庫存
詢價(jià)
PHL/INF
17+
SOT-223
6200
詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
更多BSP350供應(yīng)商 更新時(shí)間2025-1-10 10:15:00