CAB400M12XM3中文資料WOLFSPEED數據手冊PDF規(guī)格書

Technical Features

? High Power Density Footprint

? High Junction Temperature (175 °C) Operation

? Low Inductance (6.7 nH) Design

? Implements Third Generation SiC MOSFET

Technology Optimized for Low Switching Loss

? Silicon Nitride Insulator and Copper Baseplate

VDS 1200 V

IDS 400 A

System Benefits

? Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple,

low inductance design.

? Isolated integrated temperature sensing enables high-level temperature protection.

? Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection.

Applications

? Motor & Traction Drives

? Vehicle Fast Chargers

? Uninterruptable Power Supplies

? Smart-Grid / Grid-Tied Distributed Generation