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CAT28C256N-12T中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

CAT28C256N-12T
廠商型號(hào)

CAT28C256N-12T

功能描述

256 kb Parallel EEPROM

文件大小

154.33 Kbytes

頁(yè)面數(shù)量

14 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-28 22:50:00

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CAT28C256N-12T規(guī)格書詳情

Description

The CAT28C256 is a fast, low power, 5 V?only CMOS Parallel EEPROM organized as 32K x 8?bits. It requires a simple interface for in?system programming. On?chip address and data latches, self?timed write cycle with auto?clear and VCC power up/down write protection eliminate additional timing and protection hardware. DATA Polling and Toggle status bits signal the start and end of the self?timed write cycle. Additionally, the CAT28C256 features hardware and software write protection.

The CAT28C256 is manufactured using ON Semiconductor’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 100 years. The device is available in JEDEC approved 28?pin DIP, 28?pin TSOP or 32?pin PLCC packages.

Features

? Fast Read Access Times: 120/150 ns

? Low Power CMOS Dissipation:

– Active: 25 mA Max.

– Standby: 150 A Max.

? Simple Write Operation:

– On?chip Address and Data Latches

– Self?timed Write Cycle with Auto?clear

? Fast Write Cycle Time:

? 5 ms Max.

? CMOS and TTL Compatible I/O

? Hardware and Software Write Protection

? Automatic Page Write Operation:

? 1 to 64 Bytes in 5 ms

? Page Load Timer

? End of Write Detection:

? Toggle Bit

? DATA Polling

? 100,000 Program/Erase Cycles

? 100 Year Data Retention

? Commercial, Industrial and Automotive Temperature Ranges

產(chǎn)品屬性

  • 型號(hào):

    CAT28C256N-12T

  • 制造商:

    Rochester Electronics LLC

  • 制造商:

    Catalyst Semiconductor

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