CAT93C76VI-GT3集成電路（IC）的存儲器規(guī)格書PDF中文資料

CAT93C76VI-GT3屬于集成電路（IC）的存儲器。由安森美半導(dǎo)體公司制造生產(chǎn)的CAT93C76VI-GT3存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The CAT93C76 is an 8?Kb Serial EEPROM memory device which is configured as either registers of 16 bits (ORG pin at VCC or Not Connected) or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAT93C76 is manufactured using ON Semiconductor’s advanced CMOS EEPROM floating gate technology. The device is designed to endure 1,000,000 program/erase cycles and has a data retention of 100 years. The device is available in 8?pin PDIP, SOIC, TSSOP and 8?pad TDFN packages.

Features

? High Speed Operation: 3 MHz @ VCC ≥ 2.5 V

? Low Power CMOS Technology

? 1.8 to 5.5 Volt Operation

? Selectable x8 or x16 Memory Organization

? Self?timed Write Cycle with Auto?clear

? Software Write Protection

? Power?up Inadvertant Write Protection

? 1,000,000 Program/Erase Cycles

? 100 Year Data Retention

? Industrial and Extended Temperature Ranges

? Sequential Read

? “Green” Package Option Available

? This Device is Pb?Free, Halogen Free/BFR Free and RoHS Compliant