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CDBMH3100-HF

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBMH3100-HF

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBMHT3100-HF

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CED3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,51A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=17mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,12A,RDS(ON)=12mW@VGS=10V. RDS(ON)=19mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,47A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=21mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,47A,RDS(ON)=12mW@VGS=10V. RDS(ON)=21mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3100

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=30V,ID=55A,RDS(ON)

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導體有限公司

詳細參數(shù)

  • 型號：

    CD3100-EXT

  • 制造商：

    BES

  • 功能描述：

    Cable Dolly Jr Extension Kit for 22-13272

供應商型號品牌批號封裝庫存備注價格
I-CORE
24+
DIP8
45000
絕對原廠原裝,長期優(yōu)勢可定貨
 詢價
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進口現(xiàn)貨
 詢價
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進口現(xiàn)貨
 詢價
I-CORE
20+
DIP8
45000
I-CORE一級代理音頻配套電路
 詢價
華晶
25+
DIP-8
50
原裝正品,假一罰十!
 詢價
CD
23+
DIP8
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
A
24+
DIP-8
38
詢價
華晶
23+
DIP
5500
現(xiàn)貨,全新原裝
 詢價
CSC/華晶
23+
DIP8
23
原裝原管房間現(xiàn)貨假一賠十
 詢價
CSC
23+
DIP
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多CD3100-EXT供應商 更新時間2025-5-15 14:48:00

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