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CED3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,51A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=17mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,12A,RDS(ON)=12mW@VGS=10V. RDS(ON)=19mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,47A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=21mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,47A,RDS(ON)=12mW@VGS=10V. RDS(ON)=21mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3100

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=30V,ID=55A,RDS(ON)

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導體有限公司

CEU3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,51A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=17mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CP3100SC

SMBPlastic-EncapsulateDiodes

HDSEMIJiangsu High diode Semiconductor Co., Ltd

蘇海德半導體蘇海德半導體有限公司

CR3100SA

TheCRrangeofprotectorsarebasedontheproventechnologyoftheT10thyristorproduct

Littelfuselittelfuse

力特力特公司

詳細參數

  • 型號：

    CE3100-HSP

  • 制造商：

    RadiSys

  • 功能描述：

    C ORE 2 DUO COM EXPRESS

供應商型號品牌批號封裝庫存備注價格
TDK
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進口現貨
 詢價
TDK
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進口現貨
 詢價
TDK
2016+
SMD
6523
只做原裝正品現貨!或訂貨!
 詢價
TDK
24+
1500
詢價
TDK
24+
SOP
6980
原裝現貨,可開13%稅票
 詢價
TDK
2016+
SMD
3500
本公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價
TDK/東電化
2022+
146
全新原裝 貨期兩周
 詢價
TDK
23+
SMD
10500
全新原裝現貨,假一賠十
 詢價
TDK/東電化
23+
SMD
50000
全新原裝正品現貨,支持訂貨
 詢價
TDK/東電化
22+
SMD
12245
現貨,原廠原裝假一罰十!
 詢價
更多CE3100-HSP供應商 更新時間2025-4-8 15:00:00

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