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CEB6060L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,52.4A,RDS(ON)=21mW@VGS=10V. RDS(ON)=25mW@VGS=5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6060L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,50A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060L

N-Channel Enhancement Mode Field Effect Transistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060LR

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●60V,60A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,42A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,42A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6060R

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060R

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6060L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,48A,RDS(ON)=24mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=29mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED6060N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CEB6060L

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CET/華瑞
24+
sop-8
156672
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
CET
24+
TO-263
13550
詢價(jià)
CET
24+
TO-263
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
CET/華瑞
23+
TO-263
10000
公司只做原裝正品
 詢價(jià)
CET/華瑞
2022+
TO-263
32500
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
CET
23+
TO-263
6000
原裝正品，支持實(shí)單
 詢價(jià)
CET/華瑞
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
CET
2023+
TO-263
50000
原裝現(xiàn)貨
 詢價(jià)
CET/華瑞
20+
TO-263
32500
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
 詢價(jià)
更多CEB6060L供應(yīng)商 更新時(shí)間2025-2-3 15:40:00

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