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CED540N

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,25A,RDS(ON)=53mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED540N

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,25A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF540L

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF540L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,36A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. RDS(ON)=53mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF540N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,36A,RDS(ON)=53mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF540N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP540A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,36A,RDS(ON)=48m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP540L

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP540L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,36A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. RDS(ON)=53mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP540N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,36A,RDS(ON)=53mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CED540N

  • 制造商：

    CET

  • 制造商全稱(chēng)：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
C
23+
TO-251
10000
公司只做原裝正品
 詢(xún)價(jià)
VBSEMI/臺(tái)灣微碧
23+
TO251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
VBsemi
23+
TO251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
C
22+
TO-251
6000
十年配單,只做原裝
 詢(xún)價(jià)
C
23+
TO-251
6000
原裝正品，支持實(shí)單
 詢(xún)價(jià)
CET
10+
TO-251
3830
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
 詢(xún)價(jià)
CET/華瑞
22+
TO-251
100000
代理渠道/只做原裝/可含稅
 詢(xún)價(jià)
VBsemi
2205+
TO251
2107
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢(xún)價(jià)
VB
100
詢(xún)價(jià)
VBSEMI/臺(tái)灣微碧
23+
TO251
20000
原裝正品 歡迎咨詢(xún)
 詢(xún)價(jià)
更多CED540N供應(yīng)商 更新時(shí)間2025-1-27 10:06:00

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