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CEP65A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,45A,RDS(ON)=12m?@VGS=10V. RDS(ON)=18m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM65A3PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE25VoltsCURRENT38Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

FGA65A3H

VCE=650V,IC=15ATrenchFieldStopIGBT

SankenSanken electric

三墾三墾電氣株式會社

FGF65A3H

TrenchFieldStopIGBTswithFastRecoveryDiode

SankenSanken electric

三墾三墾電氣株式會社

FGF65A3H

TrenchFieldStopIGBTswithFastRecoveryDiode

SankenSanken electric

三墾三墾電氣株式會社

FGF65A3L

TrenchFieldStopIGBTswithFastRecoveryDiode

SankenSanken electric

三墾三墾電氣株式會社

KGF65A3H

TrenchFieldStopIGBTswithFastRecoveryDiode

SankenSanken electric

三墾三墾電氣株式會社

KGF65A3H

TrenchFieldStopIGBTswithFastRecoveryDiode

SankenSanken electric

三墾三墾電氣株式會社

KGF65A3H

TrenchFieldStopIGBTswithFastRecoveryDiode

SankenSanken electric

三墾三墾電氣株式會社

KGF65A3L

TrenchFieldStopIGBTswithFastRecoveryDiode

SankenSanken electric

三墾三墾電氣株式會社

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